A germanium P N diode has the following properties: Tp = Tn = 10 μs, N₁ = 10¹⁹ cm³, ND = 10¹6 cm³, D₂ = 39 cm²/s, D₁ = 26 cm²/s and the area A = 1.25x104 cm². Determine: a) The diode's current when 0.2 V is applied in the forward direction. b) Repeat part (a) but in the reverse direction. c) Repeat part (a) for a silicon diode having the same properties as the Ge diode. d) Repeat part (b) for the Si diode.

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A germanium P*N diode has the following properties: Tp = Tn = 10 μs, N₁ = 10¹⁹
cm³, ND = 10¹6 cm3³, D₂ = 39 cm²/s, D₁ = 26 cm²/s and the area A = 1.25x104
cm². Determine:
a) The diode's current when 0.2 V is applied in the forward direction.
b) Repeat part (a) but in the re rse direction.
c) Repeat part (a) for a silicon diode having the same properties as the Ge diode.
Repeat part (b) for the Si diode.
d)
Transcribed Image Text:A germanium P*N diode has the following properties: Tp = Tn = 10 μs, N₁ = 10¹⁹ cm³, ND = 10¹6 cm3³, D₂ = 39 cm²/s, D₁ = 26 cm²/s and the area A = 1.25x104 cm². Determine: a) The diode's current when 0.2 V is applied in the forward direction. b) Repeat part (a) but in the re rse direction. c) Repeat part (a) for a silicon diode having the same properties as the Ge diode. Repeat part (b) for the Si diode. d)
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