A resistor was measured 13 times at the same time conditions with the following results (in ohms): 100,996,990,995,1005,994,10003,10,998,999,1001,997,1003. Compute the sample mean value of the resistance.
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- Determine the approximate value *The carrier concentrations (Figure 1) are approximations for the case where the net (n-type or p-type) doping of the semiconductor is very well defined (>> ni ). For generic semiconductor doping, the relations in Figure 2 take effect. Deduce the relations from Figure 2. Please explain each step as I'm having trouble in understanding this subject. P.S.: I sent this question before and the signals in Nd and Na came out wrong. Please be aware!A platinum RTD PT100 measures 100 Q at 0 °C and 139.1 Q at 100 °C. If Temperature Coefficient of RTD PT100 is given as 0.01197 calculate the resistance (2) of the RTD at 50 °C. O 155.05 O 159.85 O 1059.85 O 164.65
- Except for FinFET and GaaFET discussed in the lecture, there are many new designs of FET. Please do a detailed study on any of them. In less than 200 words, state the advantages of it over the traditionalCan I compare the Hall coefficient of a semiconductor I am using to another sample of the same element and type (p-type)? I have read that the Hall coefficient is dependent on the dimensions of the sample so in this case, it wouldn't be comparable. I would appreciate any guidance as i am still unsure.Date 03175996 28) A battery of emif 4V and grternal. xesistance 2n s joined to a desistor of 8 2 calculate the terminal potential difference. What additional xesistance in sedies with 8-2 sesistor Would produce a texminal pd of 3.6V? Taacher's Signalure
- For the circuit shown below, the diode cut in voltage is Vy0.7V. Th value of I, varies over the range 0 s l, s 6mA. The Value of R-2.4kn and the value of Ve 4.8V Vo At which value of l, does the diode turn on O a.2.292 mA b. 1.833 mA c. 2.865 mA O d. 1.467 mA If l = 2.1mA, What is the value of Vo O a. 5.04 V O b. 4.03 V O c 6.3 V O d. 3.23 V If l= 1.6mA, What is the value of lo O a. 1.917 mA b. 0 mA O c 0.639 mA O d. 1.278 mA EO oWhich of the following ratings (PIV- Peak Inverse Voltage and temperature) is true? A)Si diodes have lower PIV and wider temperature ranges than Ge diodes. B) Si diodes have lower PIV and narrower temperature ranges than Ge diodes. C) Si diodes have higher PIV and narrower temperature ranges than Ge diodes. D) Ge diodes have lower PIV and smaller temperature ranges than Si diodes.sponse. Question 8 NPN BJT is considered as two diodes their anodes are connected together. True False Moving to another question will save this response. e to search
- Create the Diode Characteristic Curve for this data values. Diode Voltage (VD) Diode Current (ID) 0.890904 9.109 0.884515 7.115 0.876023 5.124 0.86333 3.137 0.837654 1.162 0.793023 0.206975 0.779114 0.120885 0.754079 0.04592 0.695273 0.004727 0.599882 0.000118256 0.499998 0.000002487 0.4 5.2464E-08 0.3 1.39E-09 0.2 2.23008E-10 0.1 1.00568E-10 0 0 -0.1 -1.0011E-09 -0.2 -2.00211E-09 -0.3 -3.0031E-09 -0.4 -4.00411E-09 -0.5 -5.0051E-09 -0.6 -6.0061E-09 -0.7 -7.0071E-09 -0.8 -8.0081E-09 -0.9 -9.00911E-09 -1 -1.001E-08 -2 -2.002E-08 -4 -4.004E-08 -6 -6.006E-08 -8 -8.008E-08 -10 -1.001E-07 -20 -2.002E-07 -40 -4.004E-07 -60 -6.006E-07 -80 -8.008E-07 -100 -0.000001001 -200 -0.000002002 -300 -0.000003003 -400 -0.000004004 -500 -0.000005005Calculate the sensitivity if the RTD temperature is 877 °C and Resistance as 540.5 ohms. O a. 1.23 O b. 3.70 O c. 0.62Please help. You are going to draw arrows that indicates the flow of the given 5 actions (a,b,c,d,e). You can draw arrows for all of them in the picture above, or make separate drawing for each letter. Please help me this is about CARRIER ACTION/FLOW OF CARRIERS in a semiconductor. It is also about Ferni Level.