Question3: A uniform piece of n-type of silicon that is lum long senses a voltage of 1 V.Determine the velocity of the electrons. Use u-1350 cm?/V.secQuestion4: A pn junction is biased with a reverse voltage (VR) and is doped with NA = 2x10icm' and Np-9x10" (cm' Determine the capacitance of the device with (a) Va=Ov, (b) Vx=lv.Use e, = 11.7 eg, Ev-8.854x10 " F/em, q=1.6x10 "c, n=1.5x1010 fem , m=1/2, Py=25.8mV,Cross-section area - 10 em.

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Answered: Question3: A uniform piece of n-type of…

Question3: A uniform piece of n-type of silicon that is lum long senses a voltage of 1 V. Determine the velocity of the electrons. Use u1350 cm/V.sec

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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