Question3: A uniform piece of n-type of silicon that is lum long senses a voltage of 1 V. Determine the velocity of the electrons. Use u-1350 cm?/V.sec

Introductory Circuit Analysis (13th Edition)
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Question1: In your own words, supported by figures, demonstrate the avalanche breakdown
which may occur in a silicon pn junction.
Question2: Calculate I, and the current / for V=0.73v for a pn junction for which N=1017/cm',
No-1016/cm, A=10um x10um, n=1.5x1010%cm², L=5µm, L=10x10ʻcm, D,=10x10°um²/s, and
D-18cm/s.
Question3: A uniform piece of n-type of silicon that is lum long senses a voltage of 1 V.
Determine the velocity of the electrons. Use µ„=1350 cm³/V.sec
Question4: A pn junction is biased with a reverse voltage (Vr) and is doped with NA = 2x1016
/cm' and Np-9x1015 /cm Determine the capacitance of the device with (a) VR-0v; (b) VR=1v.
Use e, = 11.7 €g, Eo=8.854x10-14 F/cm, q=1.6x10-1°c, n-1.5x1010 /cm³ , m=1/2, Vr=25.8mV,
Cross-section area = 10ʻcm?.
%3D
Transcribed Image Text:Question1: In your own words, supported by figures, demonstrate the avalanche breakdown which may occur in a silicon pn junction. Question2: Calculate I, and the current / for V=0.73v for a pn junction for which N=1017/cm', No-1016/cm, A=10um x10um, n=1.5x1010%cm², L=5µm, L=10x10ʻcm, D,=10x10°um²/s, and D-18cm/s. Question3: A uniform piece of n-type of silicon that is lum long senses a voltage of 1 V. Determine the velocity of the electrons. Use µ„=1350 cm³/V.sec Question4: A pn junction is biased with a reverse voltage (Vr) and is doped with NA = 2x1016 /cm' and Np-9x1015 /cm Determine the capacitance of the device with (a) VR-0v; (b) VR=1v. Use e, = 11.7 €g, Eo=8.854x10-14 F/cm, q=1.6x10-1°c, n-1.5x1010 /cm³ , m=1/2, Vr=25.8mV, Cross-section area = 10ʻcm?. %3D
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