A sample of germanium is doped to the extent of 101ª donor atoms/cm and 7x103 acceptor atoms/cm.At the temperature of the sample the resistivity of pure (intrinsic) germanium is 60 2.cm. if the appliedelectric field is 2 V/cm, find the intrinsic carrier concentration (/cm³) and the total conduction currentdensity (A/m²). Assume le = 3800 cm? Vs and un = 1800 cm? Vs

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Answered: A sample of germanium is doped to the…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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GaAs and GaP make solid solutions that have the samecrystal structure as the parent materials, with As and P randomlydistributed throughout the crystal. GaPxAs1 - x existsfor any value of x. If we assume that the band gap varies linearlywith composition between x = 0 and x = 1, estimatethe band gap for GaP0.5As0.5. (GaAs and GaP band gaps are1.43 eV and 2.26 eV, respectively.) What wavelength of lightdoes this correspond to?
1- A 10kΩ resistor is made of two strips connected in parallel, each one has 40µm thick, and 6mm long, one strip is of intrinsic germanium and has 0.5mm wide. Determine the width of other strip if it made of Ge., doped with 10 21 donor atom/cm3 ,at the working temperature. The intrinsic carrier density of Ge is 2.5 × 1019 m -3 , and the electron and hole mobilities are 0.4 m2 /V.sec. and 0.2 m2 /V.sec. respectively.
Boron atoms are added to a Si film resulting in an impurity density of 4 × 10^16 cm^–3.(a) What is the conductivity type (N-type or P-type) of this film?(b) What are the equilibrium electron and hole densities at 300 K and 600 K?(c) Why does the mobile carrier concentration increase at high temperatures?(d) Where is the Fermi level located if T = 600 K?
Find the electric field (magnitude and direction) at the point P for the following 3-charge configuration, where Q= +1nC and a=2cm. Show detailed work and a free body diagram.
A 10KQ resistor is made of two strips connected in parallel, each one has 40µm thick, and 6mm long, one strip is of intrinsic germanium and has 0.5mm wide. Determine the width of other strip if it made of Ge., doped with 10 21 donor atom/cm ,at the working temperature. The intrinsic carrier density of Ge is 2.5 x 1019 m3, and the electron and hole mobilities are 0.4 m2 N.sec. and 0.2 m? N.sec. respectively.
A Geiger–Mueller tube is a radiation detector that consists of a closed, hollow, metal cylinder (the cathode) of inner radius ra and a coaxial cylindrical wire (the anode) of radius rb Fig. P24.42a). The charge per unit length on the anode is λ, and the charge per unit length on the cathode is −λ. A gas fills the space between the electrodes. When the tube is in use (for example, in measuring radioactivity from fruit in Fig. P24.42b) and a high-energy elementary particle passes through this space, it can ionize an atom of the gas. The strong electric field makes the resulting ion and electron accelerate in opposite directions. They strike other molecules of the gas to ionize them, producing an avalanche of electrical discharge. The pulse of electric current between the wire and the cylinder is counted by an external circuit. (a) Show that the magnitude of the electric potential difference between the wire and the cylinder i
Determine the size and direction of the electric field at point P (3m, 5m, 2m) caused by the charge Q1= +5 mC which is at the point (-1m, -1m, -1m) and the Q2 charge = -2 mC which is at the point (1m, 1m, 1m).
An infinite line charge with a liner charge density of λ with a potential difference Vab wherein the points of a and b is ra and rb distances away from the situated line charge. Derive Vab.
Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration of (1×1016electron/m³) with the doping concentration of (2×1016atoms/m³) of the phosphorus and (1×1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m2/V.s), the mobility for the holes (0.05m2/V.s), the electric field (100V/m), and the cross section area is 1mm?.
For a p-substrate silicon n-MOS capacitor at T=300 K, the substrate doping is NA= 4.25×10^16/cm 3 . The value of ni at T=300 K is 1.5×10^10/cm 3 . (I) What is bulk potential φB ?(ii) When the surface is inverted, what is the total surface band bending φs?(iii) For φm= 4.36 eV and ϗ=4.01 eV, what is the flat band voltage VFB?(iv) Find the maximum depletion width xDT (μm) when the surface is inverted.
A n electric field of 10V/cm is applied to an intrinsic silicon sample. If the carriers drift lcm in 100μs, determine, at Τ = 300K: a) The drift velocity. b) The diffusion constant. c) The conductivity.
Silicon cylinder of radius r = 1 cm carries a current of 100 mA at roomtemperature.What is the intrinsic carrier (electrons n and holes p) drift speed?

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