An intrinsic silicon sample is doped from two different impurity sources whose concentrations vary along the length of the bar as shown in the figure below: Silicon Boron atoms 10em3 "cm 1 x (um) Arsenic atoms 10"cm Straight line 1 x (um) After the process of doping, the bar is kept under equilibrium at room temperature. There exists a built-in electric field inside the semiconductor due to the variation of resultant doping profile. The peak of this electric field (magnitude) exists at x equal to um.

An intrinsic silicon sample is doped from two different impurity sources whose concentrations vary along the length of the bar as shown in the figure below: Silicon Boron atoms 10em3 "cm 1 x (um) Arsenic atoms 10"cm Straight line 1 x (um) After the process of doping, the bar is kept under equilibrium at room temperature. There exists a built-in electric field inside the semiconductor due to the variation of resultant doping profile. The peak of this electric field (magnitude) exists at x equal to um.

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

See similar textbooks

Similar questions

An n-type semiconductor sample has an electron density of 6.25x10^18/cm^3 at 300K.If the additive-free concentration of the carriers is 2.5x10^13/cm^3, what is the hole density at this temperature?
If the hole mobility in a sample of silicon doped P-type is 108.0 cm^2/Vs at 275°K, then what is the diffusion constant for holes at this same temperature in cm^2/s? (Hint: Remember that kT/q = 26mV at 300°K, and use this to find the value for kT/q at 275°K.)
For intrinsic semiconductors, the concentration of intrinsic carriers ni depends on the temperature of theas follows:Thus, a graph of (ln ni) as a function of 1 / T (K) –1 must be linear and have a slope of (-Ee / 2k). Explain,succinctly, the reason for the presence of factor 2 in the denominator of Equation 1.
A sample of n-type silicon semiconductor has the following properties:Donor density Ndis 5x1019per cm3Mobility of electron is 1500 Mobility of hole is 500Electron charge q = 1.602x10-19coulombs.Intrinsic carrier density ni= 1.45x1010per cm3a)Find the density of holes and electrons in this sampleb)Find the conductivity of the given sample if the. c)What is the resistivity of the given sample?
The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differ
A group IV semiconductor has an intrinsic carrier concentration of 2.4×10^13 ??−3 at 300 K.a. Given its electron and hole mobilities, calculate its intrinsic electrical conductivity which are 3900 ??^2/?? and 1900 ??^2/?? respectively.
A 0.5 W zener diode is rated to have VzT = 4 V at a test current of IzT =11.0 mA. Its incremental resistance r, = 68.0 Ohms. What voltage will result when conducting a reverse current of Iz = 21 mA? What is the maximum safe current, using the linearized model and including the effect of rz?
Elaborate the following with Scientific Reason a. Why Intrinsic Semiconductor materials are the bad conductors of electricity? Elaborate the process to make them full conductors b. Elaborate the concept and importance of Majority Carriers and Minority Carriers inside P-N Junction c. Elaborate why Depletion Zone inside P-N Junction is a problematic area? What necessary measurement should be taken to remove the depletion zone?
Using Schockley’s equation;i. Determine the diode current at 20 ◦C, for a silicon diode with Is = 50 nA and an applied forward bias of 0.6V.ii. Repeat part i, for T = 100 ◦C, assuming that Is has increased to 5.0 µA.
2. For a semiconductor with a constant mobility ratio b=μn/μp > 1 independent of impurity concentration, find the maximum resistivity ρm in terms of the intrinsic resistivity ρi and the mobility ratio.(HINT: First, express the conductivity as the sum of the contributions of the electrons and holes. The expression will contain both n and p. Eliminate one of them by using the fact that their product is a constant at a given temperature. Next, to obtain the maximum resistivity, take a derivative with respect to the carrier concentration (which you did not eliminate in the previous step). Then obtain the ratio of ρm /ρi. This ratio should be independent of the carrier concentrations.)
The thermal equilibrium concentration at T = 300 K of the p0 hole in the silicone is 10^15 cm^3. What is the value of n0?
An n-type semiconductor with direct band structure (Eg = 2.5 eV) is applied with a DC voltage shown below. (i) Schematically draw the band diagram for this semiconductor under this DC voltage. (ii) Calculate the longest wavelength in light absorption from this n-type semiconductor with applied DC voltage.