Assignment 1.Many ECG devices are equipped withdriven-right-leg circuit to minimizecommon-mode interference. The figureon the right shows the schematic diagramof this circuit. When the displacementcurrent, ia flows to the patient from thepower lines, it leads to the common-mode voltage, Vcm on the patient in thedriven right-leg circuit.RL.Auxiliaryop ampCalculate vem if R,= 25KN,R;= R, = 5MQ, RRL = 100kn and ig = 0.2µA.

Answered: Assignment 1. Many ECG devices are…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Consider a voltage-divider configuration of n-channel enhancement-type MOSFET where R1 = 12 MΩ, R2 = 7 MΩ, RD = 3 kΩ, RS = 1 kΩ. The MOSFET has a threshold voltage VGS(Th) = 3V, and one example point on the transfer characteristics curve is VGS(on) = 6V, ID(on) = 5 mA. Determine VGSQ, IDQ, Vs, VD, VDS assuming VDD = ( 80 ÷ 10 ) +20 V
For the transistor , IS = 4 × 10−16 μA,βF = 75, and βR = 4. (a) Label the collector, base,and emitter terminals of the transistor. (b) What isthe transistor type? (c) Label the emitter-base andcollector-base voltages, and label the normal direction for IE , IC, and IB. (d) Write the simplified formof the transport model equations that apply to thisparticular circuit configuration. Write an expressionfor IE /IB. Write an expression for IE /IC. (e) Findthe values of IE , IC, IB, VC B, and VE B.
Fixed bias configuration1. Plot the transfer characteristics of the device and superimpose the network equation on the same graph. 2. Determine IDQ and VDS.3. Using Shockley's equation, solve for IDQ and determine VDSQ. Compare with the solutions in part (c).
The following are the required circuit parameters for the T1 transistor in the following circuit. VBE=0.7 V, β=100, Cbc=Cμ=100pF,Cπ=Cbe=200pF, VA=∞, VT=26mV, and ro negligence;a) Find IB, IC, IE currents.b) Find VCE, VB, VC and VE voltages.c) Set the Q working point by drawing the load line of the circuit.d) Find the lower sector frequency value.e) Find the upper cut frequency value.R: 409
Problem: Fx=(AB+CD+EF+G)' a. Draw its equivalent transistor circuit. b. Determine if the function has an Euler's path. please draw the equivalent Euler's path. C. Whether the circuit has a Euler's path or not, draw the stick diagram.
Figure 1 shows the transfer curve of a network with an unknown channel Junction Field Effect Transistor (JFET). (i) Identify the channel of the JFET; justify your answer. (ii) Given the supply voltage of 16 ?, design a voltage divider network using the JFET in (i) above. Take ?1 = 1400??; ?2 = 180??; and ?? = 10 ?. Please use the nearest standard resistor values. (iii) With the obtained standard resistance values in (ii) above, determine the new ??? and ????, using the mathematical approach only.
In order to express the effect of the internal capacitors of BJT and the high frequency reception, the current gain expression depending on the frequency (Figure b) (hfe) is used in the case of collector emitter short circuit, voltage source connected at base end and emitter grounded (Figure la).. The catalog information of the 2N2222 transistor is given in Figure Ic. In the catalogue, when Ic=20 mA, it is seen as fT=250 MHz. a) Find the total capacitor effect for the case where gm> > wCμ. (Cpi) + (Cμ) = ?pF
Answer as quickly as possible. I'll give upvote. Thank you. The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the gm and ro of transistor M1.
For an n-channel depletion-mode MOSFET, in the saturation region ID = 8mA when VGS = 0, and the dynamic (incremental) output resistance r0 is infinite. The threshold voltage (or pinch-off voltage) is VTR = VP = –2.5V. For VGS = 0, find the smallest value of VDS at which the MOSFET is in saturation. For VDS equal to this value, find ID when (i) VGS = –1V, (ii) VGS = –2V, (iii) VGS = –3V, (iv) VGS = –4V.
In the circuit in the figure, Vcc = 18 V and RL = 2.2 kΩ, while C1 = C2 = CE = 0.1 μF. It is also known that for parasitic and wiring capacitors, Cwi = 15 pF, Cwo = 21 pF, Cbc = 27 pF, Cbe = 887 pF and Cce = 25 pF. Accordingly, what is the bandwidth of the system? NOTE-1: The output impedance of the transistor r0 will be neglected in the calculations. NOTE-2: The high frequency dependence of hfe, β, will be neglected.
Connect the elements given below as a BJT amplifier circuit with common emitter. BJT is BC547Bterminals from left to right are named collector, base and emitter respectively. 9V battery as VCC sourcewill be used. The audio signal obtained from the microphone will be connected to the circuit as the input signal. C0 at the outlet, CI at the inlet,CE is given as a bypass capacitor.
In the circuit given in the figure, what is the voltage gain (Av) of the circuit when = 100, r0 = 40 kΩ, RB = 360 kΩ, RC = 3.3 kΩ, RE = 220 Ω, Rs = 15 kΩ and RL = 166 kΩ?NOTE-1: The output impedance r0 of the transistor will be taken into the calculations.NOTE-2: Capacitors are negligible at mid-band frequency.

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