For an n-channel depletion-mode MOSFET, in the saturation region ID = 8mA when VGS = 0, and the dynamic (incremental) output resistance r0 is infinite. The threshold voltage (or pinch-off voltage) is VTR = VP = –2.5V. For VGS = 0, find the smallest value of VDS at which the MOSFET is in saturation. For VDS equal to this value, find ID when (i) VGS = –1V, (ii) VGS = –2V, (iii) VGS = –3V, (iv) VGS = –4V.

Sketch all applicable depletion regions for an n-channel MOSFET when the source and drain remain grounded, but an appropriate voltage is applied to the gate to induce a channel.

Most of the following statements about integrated circuits arecorrect, but one is not. Which statement is NOT true? Select one: a. Transistors are constructed in a small area of an integrated circuit,and are connected to other transistors by wires that are embedded inthe integrated circuit b. Wires that carry signals may be embedded in a substrate without a shortcircuit because a short circuit would require a signal to cross areverse biased junction c. Each transistor on an integrated circuit is manufactured individually,one at a time d. An integrated circuit contains several layers

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