At 1018cm3 the silicon material is n-type doped and has ae resistanceof 10 ohms. The sample has an area of 10-6cm2and a length of 10cm. What is the doping efficiency (mn = 800cm2 / V-s) of the sample?

At 1018cm3 the silicon material is n-type doped and has ae resistanceof 10 ohms. The sample has an area of 10-6cm2and a length of 10cm. What is the doping efficiency (mn = 800cm2 / V-s) of the sample?

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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At 10¹⁸cm³ the silicon material is n-type doped and has ae resistanceof 10 ohms. The sample has an area of 10^-6cm²and a length of 10cm. What is the doping efficiency (mn = 800cm² / V-s) of the sample?

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