i.A silicon sample is uniformly doped p-type with NA=1015/cm³. At T=0 K, what are theequilibrium electron and hole concentrations?ii.Mark clearly the correct directions of electron and hole flow directions and currentsin the presence of an electric field and concentration gradients as shown below.Hole Flow (Diffusion) HoleFlow (Drift)Hole Current (Diffusion)Hole Current (Drift)Electron Flow (Diffusion)Electron Flow (Drift)Electron Current (Diffusion)Electron Current (Drift)E(x)n(x)p(x)An n-type semiconductor sample is continuously and uniformly excited (optically) atii.low level. Start from the balance between the generation and recombination and findthe expression for the steady state excess hole concentration in the sample in termsof gop and Tp. Do not derive this expression using the continuity or diffusion equations.Show complete work.

Answered: i. A silicon sample is uniformly doped…

i. A silicon sample is uniformly doped p-type with Na=1015/cm³. At T=0 K, what are the equilibrium electron and hole concentrations?

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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Question

i.
A silicon sample is uniformly doped p-type with NA=1015/cm³. At T=0 K, what are the
equilibrium electron and hole concentrations?
ii.
Mark clearly the correct directions of electron and hole flow directions and currents
in the presence of an electric field and concentration gradients as shown below.
Hole Flow (Diffusion) Hole
Flow (Drift)
Hole Current (Diffusion)
Hole Current (Drift)
Electron Flow (Diffusion)
Electron Flow (Drift)
Electron Current (Diffusion)
Electron Current (Drift)
E(x)
n(x)
p(x)
An n-type semiconductor sample is continuously and uniformly excited (optically) at
ii.
low level. Start from the balance between the generation and recombination and find
the expression for the steady state excess hole concentration in the sample in terms
of gop and Tp. Do not derive this expression using the continuity or diffusion equations.
Show complete work.

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