A p-type sample of silicon has a resistivity of 5 2-em. In this sample, the hole mobility, , is 600 cm /V-s and the electron mobility, u is 1600 cm /V-s. Ohmic contacts are formed on the ends of the sample and a uniform electric field is imposed which results in a drift curent density in the sample is 2 x 10 A/cm. a) What are the hole and electron concentrations in this sample? إجابتك b) What are the hole and electron drift velocities under these conditions in * ?(m/s) إجابتك c) What is the magnitude of the * ?electric field in (V/m)

Power System Analysis and Design (MindTap Course List)
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Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
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Chapter4: Transmission Line Parameters
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Question 4
*
A p-type sample of silicon has a resistivity of 5 2-cm. In this sample, the hole mobility, µ is 600
cm /V-s and the electron mobility, H, is 1600 cm V-s. Ohmic contacts are formed on the ends of the
sample and a uniform electric field is imposed which results in a drift current density in the sample is 2
x 10 A/cm.
a) What are the hole and electron concentrations in this sample?
إجابتك
b) What are the hole and electron drift
velocities under these conditions in
* ?(m/s)
إجابتك
c) What is the magnitude of the
* ?electric field in (V/m)
إجابتك
Transcribed Image Text:Question 4 * A p-type sample of silicon has a resistivity of 5 2-cm. In this sample, the hole mobility, µ is 600 cm /V-s and the electron mobility, H, is 1600 cm V-s. Ohmic contacts are formed on the ends of the sample and a uniform electric field is imposed which results in a drift current density in the sample is 2 x 10 A/cm. a) What are the hole and electron concentrations in this sample? إجابتك b) What are the hole and electron drift velocities under these conditions in * ?(m/s) إجابتك c) What is the magnitude of the * ?electric field in (V/m) إجابتك
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