Question

Asked Feb 28, 2020

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At 300 K, the equilibrium electron concentration in a doped silicon sample is 5x10^{19}/cm^{3}. Determine the equilibrium hole concentration.

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Step 1

According to the law of mass action for semiconductors, the product of the equilibrium electron and hole concentration is equal to the square of the intrinsic carrier concentration. This can be expressed as

Step 2

For Silicon (Si), the intrinsic carrier concentration at 300 K can be expressed as

Step 3

In this case, for the doped Silicon substrate, the value of the equilibrium electron concentration is given as

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