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Asked Feb 28, 2020
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At 300 K, the equilibrium electron concentration in a doped silicon sample is 5x1019/cm3. Determine the equilibrium hole concentration. 

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Expert Answer

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Step 1

According to the law of mass action for semiconductors, the product of the equilibrium electron and hole concentration is equal to the square of the intrinsic carrier concentration. This can be expressed as

Electrical Engineering homework question answer, step 1, image 1

Step 2

For Silicon (Si), the intrinsic carrier concentration at 300 K can be expressed as

Electrical Engineering homework question answer, step 2, image 1

Step 3

In this case, for the doped Silicon substrate, the value of the equilibrium electron concentration is given as

Electrical Engineering homework question answer, step 3, image 1

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