In a p-type silicon sample with the hole concentration is equal to 2x1016 cm³. If the intrinsiccarrier concentration is 4x1011 cm³. The electron concentration (cm³) would be ...5x10^68x10^62.6x10^106x10^5O O

Given Data: p = hole concentration = 2 x 1016 cm-3 e = electron concentration = required ni =…

Answered: In a p-type silicon sample with the…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Similar questions

Given a silicon diode current of 6mA and reverse current 1nA, find the forward diode voltage VD in volts.
A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 A
3. at ??? = 10mA. Determine also the diode dynamic resistance at ??? = 10mA, and compare it with the theoretical value obtained from the equation
For a silicon pn junction under forward biased condition, the reverse saturation current is 10 nA. If the value of the forward voltage across the diode is 0.5 V and the observation is being made at 300 K, then what will be the value of the diode current?
A silicon material is doped 2.25 x 10 ^ 15 atoms / cm ^ 3 with an element from the group 5a. At T = 300K, Ni = 1.5 x 10 ^ 10 cm ^ -3 is given for the silicon atom. Accordingly, which option has the correct electron and hole concentrations?
Boron gas is used to dope the silicon wafer to a dopant concentration of 10¹6 / cm³. After letting the sample cooldown to 300K (a) What is the new number of free electrons and holes in equilibrium? (b) What type of semiconductor do we have after the process?
(a) At what temperature will ni =1015/cm3 in silicon? (b) If the donor doping is 1015/cm3, what are the electron and hole populations at the temperature inpart (a)? (c)What would be the electron and hole populations at room temperature?
A diode has wdo = 1.5 μm and φj = 0.8 V. (a) What is the depletion layer width for VR =5V? (b) For VD = −10 V?
3. Consider a silicon with intrinsic carrier concentration ni of 1010 cm-3 at room temperature.It is then doped to p-type doping with a concentration of NA = 5x1017 cm-3. What is thelocation of the Fermi level relative to the conduction band? (Hint: NC = 2.8x1019 cm-3).
Using constant-voltage diode model, where VDO = 0.5 V, plot vo versus vi. Make sure to show all steps, initial plots with dashed lines, final plot, amplitudes, slopes, intersection with axis, etc.
A Silicon substrate is doped with donor impurities and the doping concentration is given by ND=2.25x1015/cm3. If the intrinsic carrier concentration at 300 K for Silicon is ni=1.5x1010/cm3, then find out equilibrium concentration of electrons and holes.
Compare the approximate radiative minority carrier lifetimes in gallium arsenide and silicon when the minority carriers are electrons injected into the p-type region which has a hole concentration of 10^18 cm−3. The injected electron density is small compared with the majority carrier density.

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In a p-type silicon sample with the hole concentration is equal to 2x1016 cm³. If the intrinsic carrier concentration is 4x1011 cm³. The electron concentration (cm³) would be ...