This is the question with an answer..Please check if this is right or wrong then solve it please Iv.(;)(Б)Gini )D₁2D2· R₁ ²R2:2VozRiR₁R₂15a'ske154-7ка15+10Power DessipatePLR2-10 V8iskeГRBPL 226 x1036 та2Vo23-191×16-33. 19ima25вскаRiz 2-skeR₂ =-3[2-94х1 зу20-от34 watt15- 10 - 5 V. (ання )4-ткаR38.5k-2e2.94x10-3- 2.94 та.3јдео [6х10-3] x 2.5x10= 0·095 wattIZeer (3-191х10-3)2 х 4-7 х10 32оочу swatt× 8:5х10 3 (b) Figure Q1(b) shows a parallel diode configuration circuit. Both diodes are silicon typediode and the values of R₁, R₂ and Rare 2.5 k2, 4.7 kand 8.5 kn, respectively.Determine:i) the current flow in each resistor R₁, R₂ and R3ii) the power dissipated by each resistor R₁, R₂ and R3iii) the output voltage, V.+15VoDiD₂R₁2K54K7R₂Figure Q1(b)5x8-10VVo

Answered: Image /qna-images/answer/f629a7e7-9ead-4be2-8974-042db3487e2b.jpg

(b) Figure Q1(b) shows a parallel diode configuration circuit. Both diodes are silicon type diode and the values of R₁, R₂ and Rare 2.5 k 4.7 k and 8.5 kn, respectively. Determine: i) the current flow in each resistor R₁, R₂ and R3 ii) the power dissipated by each resistor R₁, R₂ and R3 iii) the output voltage, V. +15Vo Di D₂ 2K5 4K7 R₂ Figure Q1(b) 5X8 3 -10V

(b) Figure Q1(b) shows a parallel diode configuration circuit. Both diodes are silicon type diode and the values of R₁, R₂ and Rare 2.5 k 4.7 k and 8.5 kn, respectively. Determine: i) the current flow in each resistor R₁, R₂ and R3 ii) the power dissipated by each resistor R₁, R₂ and R3 iii) the output voltage, V. +15Vo Di D₂ 2K5 4K7 R₂ Figure Q1(b) 5X8 3 -10V

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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