(b) For a p-substrate silicon n-MOS capacitor at T = 300 K, the substrate doping is NA = 4.45 x 1016/ cm. Value of n; at T= 300K is 1.5 x 1010 / cm³. (i) what is bulk potential OB (V) ? (ii) When the surface is inverted, what is the total surface band bending o, (V) ? (iii) For Qm = 4.24 eV and x = 4.01 eV, what is the flat band voltage VFB (V)?
(b) For a p-substrate silicon n-MOS capacitor at T = 300 K, the substrate doping is NA = 4.45 x 1016/ cm. Value of n; at T= 300K is 1.5 x 1010 / cm³. (i) what is bulk potential OB (V) ? (ii) When the surface is inverted, what is the total surface band bending o, (V) ? (iii) For Qm = 4.24 eV and x = 4.01 eV, what is the flat band voltage VFB (V)?
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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