For a pn junction with N = 1017/cm3 and N, = 1016/cm3, find at 300K,the built-in voltage, the width of the depletion region and the distance itextends in p side and in the n side of the junction. Use concentration ofintrinsic semiconductor 1.5 x 1010/cm³and electrical permittivity 1 x 10-12F/cm.%3D

Answered: Image /qna-images/answer/804be6bc-35e6-4697-a442-9ffb32972822.jpg

Answered: = 1017/cm3 and N, = 1016/cm³, find at…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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It is desired to form a 0.2 um-deep source-drain diffusion for a transistor using a solid-solubility-Arsenic deposition at 1000C into a water with a bulk or background concentration of 3 X 1016/cm3. At this temperature, the Arsenic surface concentration is 1.05 X 1021/cm3. A. Calculate the Dt product required.B. What is the diffusion time required? Do=0.32 cm2/sec. EA= 3.56 eV
A copper bus bar has a rectangular cross-section of dimensions 3 in by 6 in. Determine the cross-sectional area in MCM.
Consider a non-ideal MOSFET that has been fabricated on a siliconwafer with initial uniform boron doping of 7.5 × 1015 cm-3. The gateoxide has a thickness tox = 35 nm, fixed charge Qf /q = 5.0 × 1010 cm-2and mobile charge Qm /q = 2.5 × 1010 cm-2 (assume other oxidecharges are negligibly small). The gate has been fabricated frompolysilicon to give a gate length of 150 nm. The work functiondifference between the polysilicon gate and the silicon is –0.35 V.Assuming a temperature of 300 K and ignoring short channel effects,calculate the threshold voltage of the MOSFET if there is zero biasapplied between the source and the silicon substrate.
In a fixed-target experiment with m1 = m2 = m, derive approximate expressions for Ecm in the following limiting cases: (a) K << mc2 and (b) K >> mc2 . Discuss your results in both cases
Considering the operating conditions of the NMOS circuit in the figure, 9m = 1.9 m was obtained. Also,RL when Rsig1 = 2 ko, Rsig2 = 3 kA, RF = 60 kg, R1 = 50 MQ, R2 = 12 MA, RD = 4.7 ko, RS = 1.2 kq and RL = 11.3 koWhat is the value of the load current li flowing through it? (Vi1 = 20 mV, Vi2 = 30 mV)NOTE-1: Capacitors are negligible at mid-band frequency.NOTE-2: NMOS output impedance will be taken into account and its value is ra = 20 ko.
Find 1) If a capacitor Cs is connected across Rs then Av= 2) The value of RD required to set Q-pt at center of saturation Regn. RD= 3) The max. undistorted peak value for vds = Electronics 2
In a mos capacitor with an oxide layer thickness of 10nm,the maximum depletion layer thickness is 100nm.The premitivity of the semiconductor and the oxide layer are epsalon s and epsalon ox respectively.What is the ratio of the maximum capacitance to minimum capacitance of this MOS capacitor.Assume epsalon s / epsalon ox =3
The values of the capacitors used in the circuit created by using cascode silicon transistors are sufficiently large and given as B1 = 100, B2 = 120. find: a) Ib1,Ib2,Ic2,Ic1,Ie1 current values? b)Vc2,Vc1,Ve1 voltage value ?
Derive mathematically the relationship between α and β? Note( The β is twice the α)
Due to a manufacturing error, the p-sideof a pn junction has not been doped. IfND = 3 × 1016 cm−3, calculate the built-inpotential at T = 300 K.
An equivalent circuit for a piezoelectric accelerometer, which uses a quartz crystal as the sensing element, is shown in the following figure. The generated charge is denoted by q and the output voltage at the end of the accelerometer cable is vo. The piezoelectric sensor capacitance is modeled by Cp and the overall capacitance experienced at the sensor output, whose primary contribution is due to cable capacitance, is denoted by Cc. The resistance of the electric insulation in the accelerometer is denoted by R. Write a differential equation relating vo to q. What is the corresponding transfer function? Using this result, show that the accuracy of the accelerometer improves when the sensor time constant is large and when the frequency of the measured acceleration is high. For a quartz crystal sensor with R = 1 × 1011 Ω and Cp = 300 pF, and a circuit with Cc = 700 pF, compute the time constant.
Design “cascade buffers” for driving high load capacitances.

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