Calculate the drift current density in (mA/m2) for the silicon at room temperature. If the intrinsic carrier concentration of (2x101 electron/m) with the doping concentration of (3x1016atoms/m') of the phosphorus and (2x101 atoms/m) of Boron. Given the mobility for the electrons (0.15m2/V.s) and the mobility for the holes (0.05m2/V.s) and the electric field (100V/m).

Calculate the drift current density in (mA/m2) for the silicon at room temperature. If the intrinsic carrier concentration of (2x101 electron/m) with the doping concentration of (3x1016atoms/m') of the phosphorus and (2x101 atoms/m) of Boron. Given the mobility for the electrons (0.15m2/V.s) and the mobility for the holes (0.05m2/V.s) and the electric field (100V/m).

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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