Consider a silicon pin junction composed of a p-type region, intrinsic region and n-type region. The p- and n-type regions are doped with acceptor density. N4 = 1 x 1016cm-³ and donor density, Np = 2 × 1015 cm-8, respectively. The intrinsic region, which is sandwiched between the p- and n-type regions, is undoped. Suppose the intrinsic region is lµm thick. Find the electric field inside the depletion regions and intrinsic region in this pin junction and compare that with the electric field within the depletion region of a pn junction with the same doping densities.

Consider a silicon pin junction composed of a p-type region, intrinsic region and n-type region. The p- and n-type regions are doped with acceptor density. N4 = 1 x 1016cm-³ and donor density, Np = 2 × 1015 cm-8, respectively. The intrinsic region, which is sandwiched between the p- and n-type regions, is undoped. Suppose the intrinsic region is lµm thick. Find the electric field inside the depletion regions and intrinsic region in this pin junction and compare that with the electric field within the depletion region of a pn junction with the same doping densities.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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