Consider a bar of semiconductor illuminated as shown in Figure P3.1. a. Sketch the concentrations of electrons and holes as functions of position. b. In which direction(s) will the electrons diffuse? Holes? c. In what directions do the electron and hole diffusion currents go? d. Explain why a plot of voltage versus position along the length of the sample is as shown in the figure. Figure P3.1 V (x)A

Consider a bar of semiconductor illuminated as shown in Figure P3.1. a. Sketch the concentrations of electrons and holes as functions of position. b. In which direction(s) will the electrons diffuse? Holes? c. In what directions do the electron and hole diffusion currents go? d. Explain why a plot of voltage versus position along the length of the sample is as shown in the figure. Figure P3.1 V (x)A

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

See similar textbooks

Similar questions

Explain why Silicon and Germanium are the most common semiconductor materials used in Electronics Devices? Give/Enumerate other semiconductor materials except Silicon and Germanium? Explain why they are not used in Electronics Devices. Explain why Covalent Bonding is used in bonding of semiconductor materials. Explain why Semiconductors are Negative Temperature Coefficient materials?
Give/Enumerate other semiconductor materials except Silicon and Germanium? Explain why they are not used in Electronics Devices.
Draw band diagrams for below contacts. a) metal-n-type semiconductor for Φm< Φs b) metal-n-type semiconductor for Φm> Φs c) metal-p-type semiconductor for Φm< Φs d) metal-p-type semiconductor for Φm> Φs Clearly specify type of contact, Schottky barrier, built-in-potential and the depletion width in the band diagram
InP is composed of equal atoms of indium and phosphorus in a lattice similar to that of silicon. (a) Suppose a germanium atom replaces an indium atom in the lattice. Do you expect the germanium atom to behave as a donor or acceptor impurity? Why? (b) Suppose a germanium atom replaces a phosphorus atom in the lattice. Do you expect the germanium atom to behave as a donor or acceptor impurity? Explain.
What are the main components that make up a photoresist? 2. What is a two-component resist? What are the two components? 3. What does the concept of dose involve? 4. What effect does the dose have on the molecular weight of a negativeresist? (Does it cause it to decrease or increase?) 5. Identify one problem that can arise when positive resist is applied to athermally grown oxide wafer (silicon substrate). How can this problembe resolved?
The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differ
Elaborate the following with Scientific Reason a. Why Intrinsic Semiconductor materials are the bad conductors of electricity? Elaborate the process to make them full conductors b. Elaborate the concept and importance of Majority Carriers and Minority Carriers inside P-N Junction c. Elaborate why Depletion Zone inside P-N Junction is a problematic area? What necessary measurement should be taken to remove the depletion zone?
How is the surface layer of silicon dioxide formed? how thick is this layer? what are the reasons for forming the Silicon dioxide layer?
We inject electrons into a p-type semiconductor 5 microns long such that the concentration varies linearly from 10E20 cm^-3 to 0 from left to right. If the mobility of the electrons is 500 cm^2/V.s, what is the current density if the electric fields are negligible?
1. What are the main components that make up a photoresist? 2. What is a two-component resist? What are the two components? 3. What does the concept of dose involve? 4. What effect does the dose have on the molecular weight of a negativeresist? (Does it cause it to decrease or increase?5. Identify one problem that can arise when positive resist is applied to athermally grown oxide wafer (silicon substrate). How can this problembe resolved?
Which of the following statements is false? A. We can create an extrinsic semiconductor materials by adding impurities to an intrinsic semiconductors. B. A pentavalent impurity addition to an intrinsic semiconductor gives N-type semiconductor. C. N-type semiconductor has more holes than the free electrons that contribute to the conduction of current. D. The P-type semiconductors have more holes than the free electrons.
Consider germanium Ge and GaAs material. Which material has lower intrinsic carrier concentration ni at a fixed temperature and what is the principal reason for that? Don,t copy from anywhere.Answer follow question step by step.