Consider a p+ n silicon diode at room temperature with the following parameters. Find out the reverse saturation current density. N₂ = 1018 cm-3, Nd = 10¹4 cm-³, μn =1000 cm²/Vs, Hp = 360cm²/Vs and T = 1µs for both electrons and holes. Solution: 4.8 x 10-10 A/cm²

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Chapter1: Atomic Structure
Section: Chapter Questions
Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?
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Consider a p+ n silicon diode at
room temperature with the
following parameters. Find out
the reverse saturation current
density.
Na = 10¹8 cm-³, Nd = 10¹4 cm-³, un
=1000 cm2/Vs, Up = 360cm2/s
and T = 1us for both electrons and
holes.
Solution: 4.8 x 10-10 A/cm²
Transcribed Image Text:Consider a p+ n silicon diode at room temperature with the following parameters. Find out the reverse saturation current density. Na = 10¹8 cm-³, Nd = 10¹4 cm-³, un =1000 cm2/Vs, Up = 360cm2/s and T = 1us for both electrons and holes. Solution: 4.8 x 10-10 A/cm²
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