Consider a silicon pn junction at T= 300 K with acceptor doping concentrations of 101 cm and donor doping concentrations of 1015cm Calculate the width of the space charge region in the pn junction when a reverse biased voltage of 5 V is applied. Note/ n, = 1.5 x 10 cm E, = 1.035 x 10-F/cm

Consider a silicon pn junction at T= 300 K with acceptor doping concentrations of 101 cm and donor doping concentrations of 1015cm Calculate the width of the space charge region in the pn junction when a reverse biased voltage of 5 V is applied. Note/ n, = 1.5 x 10 cm E, = 1.035 x 10-F/cm

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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Electrical Heating Unit

The conversion of electrical energy to heat energy is known as electric heating. The heating system that converts the electrical energy to heat energy for various application is called electrical heating unit. Electricity is employed as the firing mechanism in electric heating systems, which transforms electric current to heat. Electric heaters have heating elements in the form of electric resistors.

Question

Consider a silicon pn junction at T = 300 K with acceptor doping concentrations of 1016 cm and
donor doping concentrations of 1015 cm.
Calculate the width of the space charge region in the pn junction when a reverse biased voltage
of 5 V is applied.
Note/ n, = 1.5 x 1010 cm-3
E = 1.035 x 10-12F/cm

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