Consider a silicon pn junction at T = 300K. Assume the doping concentration in the n region is1020cm-3 and the doping concentration in the p region is 1019cm-3, and assume that a forward biasof 0.30 V is applied to the pn junction. Note/ n; = 1.5 x 1010 cm-3Calculate the minority carrier concentration at the edge of the space charge regions.

GivenT=300 KDoping concentration in n region ,Nn=1020 cm-3Doping concentration in p region ,Np=1019…

Consider a silicon pn junction at T 300 K. Assume the doping concentration in the n region is 1020 cm-3 and the doping concentration in the p region is 101°cm-3, and assume that a forward bias of 0.30 V is applied to the pn junction. Note/ n; = 1.5 x 1010 ст cm-3 Calculate the minority carrier concentration at the edge of the space charge regions.

Consider a silicon pn junction at T 300 K. Assume the doping concentration in the n region is 1020 cm-3 and the doping concentration in the p region is 101°cm-3, and assume that a forward bias of 0.30 V is applied to the pn junction. Note/ n; = 1.5 x 1010 ст cm-3 Calculate the minority carrier concentration at the edge of the space charge regions.

Glencoe Physics: Principles and Problems, Student Edition

1st Edition

ISBN:9780078807213

Author:Paul W. Zitzewitz

Publisher:Paul W. Zitzewitz

Chapter29: Solid-state Electronics

Section29.1: Conduction In Solids

Problem 17PP

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