Consider a n-type Si crystal at room temperature (300K) doped with 6 x1016 cm-3 arsenic impurity atoms and with certain number of shallowholes. Find out the equilibrium electron concentration, hole concentrationand Fermi level EF with respect to Ei, and the conduction band edge EC.For Si at 300K, the value of ni is 1.45 x 1010 cm-3 and k = 1.38 x 10-23 J/K,1eV = 1.60 x 10-19J. The band gap energy, Eg, of Si is 1.2eV.Solution:n @ Nd = 6 x 1016 cm-3.In equilibrium condition, hole concentration = 3.5 x 103 cm-3.EF – EI = 0.396eVEC – EF = 0.164eV. Consider a n-type Si crystal at room temperature (300K) doped with 6 x1016 cm3 arsenic impurity atoms and with certain number of shallowholes. Find out the equilibrium electron concentration, hole concentrationand Fermi level EF with respect to E and the conduction band edge Ec.For Si at 300K, the value of n; is 1.45 x 1010 cm3 and k =1.38 x 10-23 J/K,lev =1.60 x 10-19J. The band gap energy, E, of Si is 1.2eV.Solution:n= Nd = 6 x 1016 cm³.In equilibrium condition, hole concentration = 3.5 x 103 cm3.EF - E1 = 0.396eVEc - EF = 0.164eV.

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Consider a n-type Si crystal at room temperature (300K) doped with 6 x 1016 cm3 arsenic impurity atoms and with certain number of shallow holes. Find out the equilibrium electron concentration, hole concentration and Fermi level EF with respect to E and the conduction band edge Ec. For Si at 300K, the value of n; is 1.45 x 1010 cm3 and k =1.38 x 10-23 J/K, lev =1.60 x 10-19J. The band gap energy, E, of Si is 1.2eV. Solution: n= Nd = 6 x 1016 cm³. In equilibrium condition, hole concentration = 3.5 x 103 cm3. EF - E1 = 0.396eV Ec - EF = 0.164eV.

Consider a n-type Si crystal at room temperature (300K) doped with 6 x 1016 cm3 arsenic impurity atoms and with certain number of shallow holes. Find out the equilibrium electron concentration, hole concentration and Fermi level EF with respect to E and the conduction band edge Ec. For Si at 300K, the value of n; is 1.45 x 1010 cm3 and k =1.38 x 10-23 J/K, lev =1.60 x 10-19J. The band gap energy, E, of Si is 1.2eV. Solution: n= Nd = 6 x 1016 cm³. In equilibrium condition, hole concentration = 3.5 x 103 cm3. EF - E1 = 0.396eV Ec - EF = 0.164eV.

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 4P

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