Consider silicon at T-300 k. A Hall Effect device is fabricated with the following parameters: Geometry (d=0.005 cm, w=0.05 cm and L-0.5 cm); Ix-5 mA, Vx 6.25 V, and B₂-5x10-² Tesla, VH =-6.5 mV, then the electron carrier mobility (m²/V.Sec) is.......... O2083 O 2200 O 2100 2020

Consider silicon at T-300 k. A Hall Effect device is fabricated with the following parameters: Geometry (d=0.005 cm, w=0.05 cm and L-0.5 cm); Ix-5 mA, Vx 6.25 V, and B₂-5x10-² Tesla, VH =-6.5 mV, then the electron carrier mobility (m²/V.Sec) is.......... O2083 O 2200 O 2100 2020

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 9P

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Consider silicon at T-300 k. A Hall Effect device is fabricated with the following parameters:
Geometry (d=0.005 cm, w=0.05 cm and L-0.5 cm); Ix-5 mA, Vx 6.25 V, and B₂-5x10-² Tesla,
VH =-6.5 mV, then the electron carrier mobility (m²/V.Sec) is..........
O2083
O 2200
O 2100
O 2020

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