D2.2. A charge of -0.3 µC is located at A(25, -30, 15) (in cm), and a second charge of 0.5 µC is at B(-10, 8, 12) cm. Find E at: (a) the origin; (b) P(15, 20, 50) cm.
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- A silicon sample is supporting an electric field of −1500 V/cm, and the mobilities of electrons and holes are 1000 and 400 cm2/V·s, respectively. What are the electron and hole velocities? If p=1017/cm3 and n=103/cm3, what are the electron and hole current densities?Answer ASAP, I'll upvote. Thanks. Take the first part of the energy band figure shown below where material A is attached to material B. If a positive voltage was applied to A, and B was attached to ground, is the AB junctionforward-biased or reverse-biased? The built-in voltage of a PN junction is due to a charge gradient between the two sides of the junction, as shown by the graphs. What is the cause of this charge gradient? Answer in 1 sentence.A diffused silicon PN junction has a linearly graded junction in the P-side with ?=10^19cm−3, and a uniform doping of 3×10^14 cm−3on the N-side. If the depletion layer width of the P-side is 0.8μm at zero bias, find the total depletion layer width, built-in potential, maximum field at zero bias and sketch the potential distribution.
- Consider the above semiconductor structure, where Al is alloyed into an n-type Si sample with Nd=1016 cm-3 that formed a circular cross-section junction of diameter 0.02 inch. If the acceptor ion concentration in the alloyed regrown region is Na=4x1018 cm-3 then for this junction at thermal equilibrium calculate- (a) V0, xn0, xp0, Q+ and ε0.(b) Draw the charge density and electric field distribution within the region, W.Assume D = D0e^–Ea/kT is the diffusion coefficient of boron in silicon surface, whereD0 = 10.5 cm^2/s and Ea = 3.7 eV. The substrate is N-type silicon doped to 10^15 cm^3.N0 = 10^15 cm^2 of boron is introduced just below the silicon surface.(a) What is the junction depth after a 1-h drive-in at 1,100°C?(b) By how much will the junction depth change after 10^6 h (~100 years) of operation at100°CEstimate the temperature (in Kelvins) at which GaAs has an electrical conductivity of 2.5x10^-5 (ohm-m)^-1, assuming a temperature dependence for stress as shown in equation(stress = (CT^-(3/2)) exp((-E_g)/2kT)). For GaAs, use a band gap of 1.42eV, and a room temperature (298K) conductivity of 1.0x10^-6(ohm-m)^-1.
- A n electric field of 10V/cm is applied to an intrinsic silicon sample. If the carriers drift lcm in 100μs, determine, at Τ = 300K: a) The drift velocity. b) The diffusion constant. c) The conductivity.The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differ1) Consider germanium Ge and GaAs material. Which material has lower intrinsic carrier concentration ni at a fixed temperature and what is the principal reason for that? 2) At low lateral field, between Si and GaAs, which material has higher drift current at a particular temperature when doped with fixed n-type donors and why?
- For intrinsic semiconductors, the concentration of intrinsic carriers ni depends on the temperature of theas follows:Thus, a graph of (ln ni) as a function of 1 / T (K) –1 must be linear and have a slope of (-Ee / 2k). Explain,succinctly, the reason for the presence of factor 2 in the denominator of Equation 1.The carrier mobility of an organic semiconductor layer can be measured by the time-of-flight (TOF) photoconductivity measurement. Fig.1(a) is a schematic diagram of the TOF set-up, and Fig.1 (b) is the typical TOF transient measured for a 10 μm thick NPB film sandwiched between an ultrathin Al cathode and an ITO anode. From the constant current plateau in the TOF measurement, as shown in Fig.1(b), the transit time thus obtained for the NPB sample is 9 μs. (a) Calculate the carrier mobility in NPB layer. (b) Explain what type of the carriers, i.e., hole or electron mobility, was measured in the experiment.Hall measurement is conducted on a silicon sample of unknown doping with W= 100cm, A = 2.5 × 10-3cm2, I = 2 mA and the magnetic field is 500 Gauss. If the Hall voltage of +150mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity and mobility of the semiconductor sample.