• Design an AOI (And-Or-Invert) gate using the static CMOS implementation style, where the gate has three inputs A, B, C and the AOI function is given as: F = (A. B) + C

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• Design an AOI (And-Or-Invert) gate using the static CMOS implementation style, where the gate has three inputs A, B, C and the AOI function is
given as:
F = (A. B) + C
The layout of the AOI gate should be drawn in the standard cell style with
• nwell height: 17.1 microns, nwell width depends on the layout
o total cell height from bottom ground metal to the top of nwell: 32.4 microns
o vdd and ground rail heights: 1.8 microns
o label inputs as A, B, and C
o label the output as F
o ohmic contacts should be present
o multiple contact cuts to the transistor drain and source areas should be present
a) Design this AOI gate using the static CMOS style. Determine the W's of the transistors of the AOI gate (use minimum gate lengths) per above
design requirements.
Transcribed Image Text:• Design an AOI (And-Or-Invert) gate using the static CMOS implementation style, where the gate has three inputs A, B, C and the AOI function is given as: F = (A. B) + C The layout of the AOI gate should be drawn in the standard cell style with • nwell height: 17.1 microns, nwell width depends on the layout o total cell height from bottom ground metal to the top of nwell: 32.4 microns o vdd and ground rail heights: 1.8 microns o label inputs as A, B, and C o label the output as F o ohmic contacts should be present o multiple contact cuts to the transistor drain and source areas should be present a) Design this AOI gate using the static CMOS style. Determine the W's of the transistors of the AOI gate (use minimum gate lengths) per above design requirements.
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