Find the position of the intrinsic Fermi level with respect to the center of the bandgap in Ge at T=350 K. [where m, *= 0.55m, and m₂*= 0.37mo]. O -9.82meV O -10.26 meV O -8.92 meV O -12.8 meV
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- What is the number of occupied states in the energy range of 0.0300 eV that is centered at a height of 6.10 eV in the valenceband if the sample volume is 5.00 * 10-8 m3, the Fermi level is 5.00 eV, and the temperature is 1500 K?Find the equilibrium electron and hole concentration and the location of the Fermi level for a silicon sample at27∘Cdoped uniformly with5×1015 cm−3phosphorus atoms and4×1015 cm−3boron atoms.Suppose a pure Si crystal has 5 × 1028 atoms m-3. It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Given that ni =1.5 × 1016 m-3.
- Calculate the holes concentration (in Tera electrons/m³) for the intrinsic silicon at (350°k). (Ne=2 ×10 23 /m³, Ny= N/2).Consider the silver in the metallic state with one free electron per atom. Calculate the Fermi energy. Given that density of silver is 10.5 g/cm3 and atomic weight is 108.Find the static and dynamic resistance of a p-n germanium junction for an applied bias of 0.6V at 300K. Given Is=1.2 μA, k=1.38x10-23 JK-1.
- Si and Ge have same lattice structure. Why is C insulator while Si and Ge intrinsic semiconductors?Calculate the Fermi energy, Fermi wavevector, Fermi velocity and Fermi temperatureof Zinc. Given that the density of zinc is 7.13×103kg/m3, its atomic weight is 65.4 amu.and 1 amu = 1.67×10-27 kg.Consider a n-type Si crystal at room temperature (300K) doped with 6 x1016 cm-3 arsenic impurity atoms and with certain number of shallowholes. Find out the equilibrium electron concentration, hole concentrationand Fermi level EF with respect to Ei, and the conduction band edge EC.For Si at 300K, the value of ni is 1.45 x 1010 cm-3 and k = 1.38 x 10-23 J/K,1eV = 1.60 x 10-19J. The band gap energy, Eg, of Si is 1.2eV.Solution:n @ Nd = 6 x 1016 cm-3.In equilibrium condition, hole concentration = 3.5 x 103 cm-3.EF – EI = 0.396eVEC – EF = 0.164eV.
- calculate the fermi temperature for element X. where its fermi energy is 4.69 evA silicon p-n junction consists of a p-type region containing 3x1016 cm-3 acceptors and an n- type region containing also 1017 cm-3 donors. a. Calculate the density of electrons and holes in both p-type and n-type regions under thermal equilibrium at room temperature. b. Calculate the built-in potential of the p-n junction? c. Calculate the width of the depletion layer under a reverse bias of 1.0 V. d. Based on c, calculate the junction capacitance. Note that the junction cross-session area is 1.2 mm2.For silicon at T = 500 K with donor density N_D = 5* 10^{13} cm^ and acceptor density N_A = 0 calculate the equilibrium hole concentration in cm^{-3}. In this problem, you can assume the bandgap energy and effective masses are independent of temperature and use the room temperature values for them. Values within 5% error will be considered correct.