For the circuit shown all n-FETs have K=100 µA/V2, Vth = 1V, W/LM1 = 1, W/LM2,M3 = 2, ? = 0, R1 = 3.23kΩ. Calculate the DC values a) IDS(M2) b) IDS(M1) c) V2 d) IDS(M2) e) Vdrain(M3) f) Gm(M3) g) Draw the small signal model for this circuit h) Calculate the voltage gain (Vout/Vin)

Q: Q2. Determine whether the transistor is biased in cutoff, saturation or linear region. (a) R3= 75K2…

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A: Applying KCL at V, we get V1s+V-V2(s)1+V-V1(s)1=0 V[s+1+1]=V2(s)+V1(s) V=V1(s)+V2(s)s+2------1 Again…

Q: B : In the circuit of the figure shown. The Ge transistor is characterized by Vcc = 12V, V, = 2V ,Rc…

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Q: QI: The transistor parameters in the circuit in Fig (1) are VIN = 0.6 V, VTP = -0.6 V, K, = 0.2…

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Q: (Q1) For the circuit shown Fig. 1, the MOSFET has : K-0.5 mA/v, V -1 volt 2-0V and the circuit is…

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A: a) The circuit in the question is given as

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Q: B : In the circuit of the figure shown. The Ge transistor is characterized by Vcc = 12V, V, = 2V ,Rc…

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Q: For the Circuit shown, Let: VCC = 3.3V R1 = 85 kΩ RE = 500 Ω R2 = 35 k Ω RC = 4k Ω β = 150 Using…

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Q: c) Design an n-channel MOSFET circuit is as shown in Fig. 3(c). The circuit parameter are, Vpp = +8…

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Q: In the circuit of the figure shown. The Ge transistor is characterized by Vcc = 12V, V, = 2V ,Rc =…

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Q: 1. Draw the DC load line of the circuit below. Determine the Q-point and show it on the plot. What…

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Q: Circuit Parameters Var = 12 V Rs = 1 k R; = 100 ka R; = 40 ka Re = 3 k2 Re = 1 ka R = 10 ka Vcc Rc…

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Q: R1 R2 010v @ @

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Q: 9.23 An npn transistor is operated at I = 0.5 mA and V 2 V. It has B, = 100, V = 50 V, T, = 30 ps,…

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Q: Design an emitter-stabilized network at Ic, c. = 10 mA.B = 120, and Re = 4Rr. Use stand %3D lc

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Q: Io(lin) = K[ (VGs-V+)VDs - 0.5 VDs For the circuit shown, VTn=3V, VTp= -3V, K,= 0.1 mA/V?, K,= -0.1…

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Q: Q13/ An npn transistor circuit (See Fig. below) has a = 0.985 and VBE = 0.7V. If Vcc = 16V,…

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Q: %3D Q13/ An npn transistor circuit (See Fig. below) has a = 0.985 and VBE = 0.7V. If Vcc = 16V,…

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Q: Assume that the transistor parameters are VTN = 0.8 V and K, = 0.80 mA/V², Given VpD= 5V and R1+ R2…

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Q: For an n-channel MOSFET with tox=15 nm, L= 1.0 um, W =30 um, Lov=0.05 um, CaO = Cabo = 20 fF, I=2…

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Unijunction Transistor (UJT)

The Unijunction Transistor (UJT) is a three-terminal switching semiconductor device. It contains an n-shaped silicone object bar with a terminal attached to its two ends known as base one and base two. The third terminal is connected to a highly enclosed p-type material attached to the bar section of its length and is known as emitter. As there is only one corrective cross within the device, it is therefore called the 'Unijunction' transistor. The characteristics of the single junction transistor show the wrong resistance if it finds use in resting oscillator circuits for various applications.