answer question 2.b) (b)Figure 2 shows the E-MOSFET circuit. Assuming that, the particular MOSFET hasminimum value of Ip(on) = 200 mA at VGs = 4 V and VGSah) =2 V. Calculate the VGSand VDs for the E-MOSFET circuit if VDD= 30 V, RD = 210 N, R1 = 120 k and R2%3D= 20 k2.[Rajah 2 menunjukkan litar E-MOSFET. Dengan mengandaikan bahawa, MOSFET tertentumempunyai nilai minimum Ip(on) = 200 mA pada VGs = 4 V dan VGS ah) = 2 V. Hitung VGs dan VDsuntuk litar E-MOSFET jika VDD = 30 V, RD = 210 2, R1 = 120 k2 dan R2 = 20 k2.1VDDRpR1Figure 2[Rajah 2]

Answered: Image /qna-images/answer/999cadb3-3b20-4879-8b36-0fb6fc704be1.jpg

Figure 2 shows the E-MOSFET circuit. Assuming that, the particular MOSFET has minimum value of Ip(on) = 200 mA at VGs = 4 V and VGsah) =2 V. Calculate the VGS and VDs for the E-MOSFET circuit if VDD= 30 V, RD = 210 N, RI = 120 k and R2 (b) %3D = 20 k2. [Rajah 2 menunjukkan litar E-MOSFET. Dengan mengandaikan bahawa, MOSFET tertentu mempunyai nilai minimum Ip(on) = 200 mA pada VGs = 4 V dan VGS (ah) = 2 V. Hitung VGs dan VDs untuk litar E-MOSFET jika VDD = 30 V, RD = 210 2, R1 = 120 k2 dan R2 = 20 k2.1 VDD Rp R1 Figure 2 [Rajah 2]

Figure 2 shows the E-MOSFET circuit. Assuming that, the particular MOSFET has minimum value of Ip(on) = 200 mA at VGs = 4 V and VGsah) =2 V. Calculate the VGS and VDs for the E-MOSFET circuit if VDD= 30 V, RD = 210 N, RI = 120 k and R2 (b) %3D = 20 k2. [Rajah 2 menunjukkan litar E-MOSFET. Dengan mengandaikan bahawa, MOSFET tertentu mempunyai nilai minimum Ip(on) = 200 mA pada VGs = 4 V dan VGS (ah) = 2 V. Hitung VGs dan VDs untuk litar E-MOSFET jika VDD = 30 V, RD = 210 2, R1 = 120 k2 dan R2 = 20 k2.1 VDD Rp R1 Figure 2 [Rajah 2]

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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