For the circuit shown below, identify the logic function performed by it. Also determine the high level fan-out, if Rp(pull-up resistor) = 10 ks. Compute the maximum value of Rp for a fan-out of 5. Assume that input diode has a leakage current of 100 μA. Given: V₁ = 0.7V, V (forward voltage drop) = 0.8V, VBE(cut-in) = 0.5V, VCE(sat) = 0.2V. Transistor leakage current is negligible. 11H Ao- Во Co D₁ D₂ KH ww • 20 ΚΩ P₁ P₂ D5 10 ΚΩ D₁ 10 ΚΩ T₂ 9 +5V Rp Іон
For the circuit shown below, identify the logic function performed by it. Also determine the high level fan-out, if Rp(pull-up resistor) = 10 ks. Compute the maximum value of Rp for a fan-out of 5. Assume that input diode has a leakage current of 100 μA. Given: V₁ = 0.7V, V (forward voltage drop) = 0.8V, VBE(cut-in) = 0.5V, VCE(sat) = 0.2V. Transistor leakage current is negligible. 11H Ao- Во Co D₁ D₂ KH ww • 20 ΚΩ P₁ P₂ D5 10 ΚΩ D₁ 10 ΚΩ T₂ 9 +5V Rp Іон
Chapter59: Motor Startup And Troubleshooting Basics
Section: Chapter Questions
Problem 12SQ: How is a solid-state diode tested? Explain.
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Question
![For the circuit shown below, identify the logic function performed by it. Also determine the
high level fan-out, if Rp(pull-up resistor) = 10 ks. Compute the maximum value of Rp for
a fan-out of 5. Assume that input diode has a leakage current of 100 μA.
Given: V₁ = 0.7V, V (forward voltage drop) = 0.8V, VBE(cut-in) = 0.5V, VCE(sat) = 0.2V. Transistor
leakage current is negligible.
1H
Ao-
Во
Co
D₂
D
20 ΚΩ
P₁
P₂
10 kQ
D₁
www
10 ΚΩ
>+5V
Rp
Іон](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fb71779a4-03c9-47d7-9aa2-d072b0fc1a6b%2Fc6b229ec-c33b-4868-b541-7d5a747b1286%2Fs5yzmin_processed.jpeg&w=3840&q=75)
Transcribed Image Text:For the circuit shown below, identify the logic function performed by it. Also determine the
high level fan-out, if Rp(pull-up resistor) = 10 ks. Compute the maximum value of Rp for
a fan-out of 5. Assume that input diode has a leakage current of 100 μA.
Given: V₁ = 0.7V, V (forward voltage drop) = 0.8V, VBE(cut-in) = 0.5V, VCE(sat) = 0.2V. Transistor
leakage current is negligible.
1H
Ao-
Во
Co
D₂
D
20 ΚΩ
P₁
P₂
10 kQ
D₁
www
10 ΚΩ
>+5V
Rp
Іон
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