For the circuit shown in the adjacent figure: a) What type of biasing shown in figure? b) Determine Ic c) Determine VB and Vc. d) What is value of Rc that can be used to decrease Ic by 25 percent? +3V RC 33 kN Boc
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electric , please solve question a and b
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- For the JFET shown in Figure, Determine the minimum value of VDD required to put the device in the constant-current region of operation when VGS = 0 V. where VGS(off) = - 4 and IDSS = 42mAactivated as figure Draw the ID, VGS characteristic and show the operating point Q on the load line. NOTE = k = 0.5mA / V² and VGSth = 1vDetermine the following: a. Load voltage, ?? b. Overall current gain (Ais = iL/is) c. Ro’
- Subject:Electronics Engineering With a neat circuit diagram, explain the Voltage Divider Bias circuit using approximate analysis. Also derive the equation of stability (S) for Voltage Divider Bias circuit.Subject:Electronics Engineering How JFET has been constructed? Explain the principle of operation of JFET at different values of VGS and VDSIf VCC = +10 V = −VEE, R1 = 1 Ω, and R2 = 9.1 kΩ, what are the values ofthe switching thresholds for the Schmitt-trigger circuit in as shown and the magnitude of the hysteresis?
- The BJT shown in Figure T12.4 has β = 50 and VBE = 0.7 V. a. Determine the values of IC and VCE. b. Repeat for β=250.(a) What is the output current IO in the circuitshown if −VEE = −10 V andR = 20 ohm? Assume that the MOSFET is saturated.(b) What is the minimum voltage VDDneeded to saturate the MOSFET if VTN = 2.5 Vand K'n = 0.25 A/V2. (c) What must be the powerdissipation ratings of resistor R and the FET.In the Boost DA-DA circuit:Source voltage (E) value: in the range of [17-29] (volts),Switching frequency (f) value: 20 khz,Voltage between load ends: 40VCapacitance value: 470uFPower dissipated at load: 10 watts What is the lowest inductance L, in uH, that can keep the DC-DC converter in continuous current under these conditions? a) 269.3731 b) 415.4375 c) 364.8204 d) 163.6472 e) 578.1875
- question from book ELECTRONIC CIRCUIT DESIGN : Question No. 2 Analyze the circuit in figure 2 to find IDQ, VGSQ and VDS. As given in circuit, the IDSS is8mA but a customer requires current more than this IDSS. Suggest a change in the circuit resistorswithout changing the MOSFET. Prove your suggested circuit by doing load line analysis. Is the Q pointin the new circuit is located at correct location?amplifier (boost) DC-DA converter circuit, given below; 1- Source voltage (E) value: In the voltage range of [A B] (Volts) 2- Switching frequency (f) value: M kHz 3- Voltage between load terminals (Vload) F (volt) 4- Capacity value is 470 (microF) 5- Pload>= H(watts) consumed per load In which case below do you see the lowest L inductance value in microH that can keep the DC-DC converter in a continuous current state under the conditions? A=25 VOLT B=40 VOLT M= 25kHz F = 55 VOLT H=15 Watts a) 454.5475 b) 382,045 c) 263.62 d) 128.5 e) 581.81( b ) For the Junction Field Effect Transistor ( JFET ) shown in Figure Q1 ( b ) below , given that maximum current Ipss = 10 mA , pinch - off voltage Vp = -5 V , R D= 2 ka , source voltage and resistance are VDD= 12 V and Rs = 5 kn , respectively , solve to determine following (i) The quiescent voltage between the gate and source VGSQ . (ii) The quiescent drain current IDQ