For the voltage -divider bias configurakon in Figure I, determine: p16V a) Ise b) Ice 62ka 3.9kn LICQ oVe c) VCER Figure 1 d) Ve Ve e) VE VCEQ B = 80 IBQ 9.1k2 f) VB oVE 0.68 KL

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IGBT

IGBT stands for insulated gate bipolar transistor. It is a three-terminal device that is primarily used as an electronic switch which was developed to combine high efficiency and fast switching. IGBT is a conductivity-modulated device and consists of four layers, P-N-P-N which is controlled by a metal oxide semiconductor gate (MOS gate) structure. In the entire device operation range, the thyristor is completely suppressed and only the transistor action is permitted although the structure of IGBT is similar to the thyristor with a "MOS" gate. In higher power module, it has many applications. It is used in switching power supplies such as variable frequency drives, trains, electric cars, lamp ballasts, variable speed refrigerators, air conditioners, and arc welding machines. It is also used in switching amplifiers in industrial control systems and sound systems since it is designed to turn off and on rapidly because the IGBT can synthesize complex waveforms with low pass filters and pulse width modulation.