"Given a common emiiter amplifier (Voltage Divider) with the following network: R1 = 22k, R2 = 6.8k, Rc = 1k, Re = 560, Beta = 150, Vcc = 12V. Signal source resistance Rs = 500. The input impedance isbase and ground."Note: R2 is the resistor connected to theO 5.2k ohmsO 4.9k ohmsO 869.9 ohmsO 456.06 ohmsO 732 ohmsO 1245 ohms

To calculate the input impedance of Common Emitter amplifier (voltage divider)

Answered: "Given a common emiiter amplifier…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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choose the correct answer 1-The output voltage of an emitter follower isa-In phase with Vin . b-Much greater than Vin . c-180° out of phase.d-Generally much less than Vin .2-The ac emitter resistance of an emitter followera-Equal the dc emitter resistance .b-Is larger than the load resistance .c-Is β times smaller than the load resistance. d-Is usually less than the load resistance.3-A common-base amplifier can be used when a-Matching low to high impedance.b-A voltage gain without a current gain is required. c-A high- frequency amplifier is needed.d-All of the above.
2. "Given a common emiiter amplifier (Voltage Divider) with the following network: R1 = 22k, R2 = 6.8k, Rc = 1k, Re = 560, Beta = 150, Vcc = 12V. The load resistance Rl = 10k. The output impedance is ________. Note: R2 is the resistor connected to the base and ground." 1000 ohms 732 ohms 909 ohms 1245 ohms "10,000 ohms" 833 ohms
Figure 1 shows the transfer curve of a network with an unknown channel Junction Field Effect Transistor (JFET). (i) Identify the channel of the JFET; justify your answer. (ii) Given the supply voltage of 16 ?, design a voltage divider network using the JFET in (i) above. Take R1 = 1400RS; R2 = 180RS; and VD = 10 V. Please use the nearest standard resistor values. (iii) With the obtained standard resistance values in (ii) above, determine the new IDQ and VGSQ, using the mathematical approach only.
Design a multi-stage amplifier using the specifications below. After the necessary calculations are performed, simulate the circuit in Multisim and make any corrections/changes to the circuit, as necessary. Part I: Amplifier Specifications. • Use no more than three 2N3904 transistors. • The overall amplifier gain should be at least Av = +50 • Input signal should be at • Your circuit load • The input resistance, • The output resistance, . • VCC ≤ 20 volts • The output voltage, Vout is not inverted from the input voltage, Vin.
Data sheet below shows design parameters for a Common Source FET Transistor amplifier.VDD = 12V , VD = 0.75 VDD , VG = 0.5 VDD , Cin = Cout = 5muF , K = 1mAV-2 , VTN = 1V , R2 = 10k and ID = 2mA Q. At DC condition,design the circuit by calculating values for VG,R1,RD,VGS,RS and gm of the FET amplifier (show all the calculated steps involved). Propose and draw the DC circuit from the calculated values.
Since the transistors used in the circuit are B=100, ro= ∞(endless) ;a. re1, re2 , find the resistance values by analyzing the DC separately for each amplifier solid.b. Draw the AC equivalent circuit of the amplifier circuit.c. Find the input and output impedance values for each amplifier solid.d. Find a Av1, Av2 voltage gains for each amplifier floor.e. Find gerilim voltage value by finding AVLvoltage gain.(XX = 18)
I - Design a CS amplifier using E-MOSFET with voltage gain 20dB , VGS=5V , VDD=12V ( gm=4500μS ).II - A JFET datasheet gives VGS(OFF) = -4V and IDSS = 5 mA. Determine the values of ID for VGS from 0 V to -5V in 1V steps. Plot the transfer curve from these data on a graph sheet.
DESIGN AND SIMULATION OF A TWO-STAGETRANSISTOR AMPLIFIER USING LTSPICE TWO-STAGE INVERTING AMPLIFIER VOLTAGE GAIN ≥ 300 A. SCHEMATIC WITH COMPONENT VALUESB. SCHEMATIC OR CIRCUIT DISCUSSION
Figure 1 shows a well-known circuit configuration with the bypassed source resistor using an n-channel D-MOSFET with yos = 20µS. (iv) Calculate transconductance, gm and rd. (v) Calculate the input, Zi and output impedance, Zo for the circuit. (vi) Prove that the equation for the no-load Gain, AvNL, for the circuit is as follows: AvNL = -gm (RD X rd / RD + rd) (vii) Calculate the no-load gain AVNL. (viii) Find the value of VoNL if Vi = 30 mV.
Figure 1 shows a well-known circuit configuration with the bypassed source resistor using an n-channel D-MOSFET with yos = 20µS. (i) Draw the DC equivalent circuit for the Figure 1. (ii) Calculate the operating point IDQ and VGSQ for the configuration using mathematical method. (iii) Draw the AC equivalent circuit for the Figure 1. (iv) Calculate transconductance, gm and rd. (v) Calculate the input, Zi and output impedance, Zo for the circuit. (vi) Prove that the equation for the no-load Gain, AvNL, for the circuit is as follows: AvNL = -gm (RD X rd / RD + rd) (vii) Calculate the no-load gain AVNL. (viii) Find the value of VoNL if Vi = 30 mV.
For the circuit in the figure, find the ones requested in the questions by using the following values? Vcc= 11 V, β=125, RF=227 kΩ, RC=3,6 kΩ, RE=0,9 kΩ VCE=? VCB=?
Re=1kohms Rb=560 ohms R1= 22k ohms R2= 6.8K ohms (R1 nd R2 in series) Beta= 175, For the amplifier above, Zin is approximately...

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