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Gold in silicon introduces an acceptor levels 0.54 eV below the conduction band edge, and a donor level 0.35 eV above the valence band. What will be the state of charge (or occupation) of the gold levels in silicon, doped with: a) High concentration of donor atoms (with respect to the gold concentration) b) High concentration of acceptor atoms? c) What is the effect of gold atoms on the electron and hole concentrations?

Gold in silicon introduces an acceptor levels 0.54 eV below the conduction band edge, and a donor level 0.35 eV above the valence band. What will be the state of charge (or occupation) of the gold levels in silicon, doped with: a) High concentration of donor atoms (with respect to the gold concentration) b) High concentration of acceptor atoms? c) What is the effect of gold atoms on the electron and hole concentrations?

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Gold in silicon introduces an acceptor levels 0.54 eV below the conduction band edge, and a donor level 0.35 eV above the valence band. What will be the state of charge (or occupation) of the gold levels in silicon, doped with: a) High concentration of donor atoms (with respect to the gold concentration) b) High concentration of acceptor atoms? c) What is the effect of gold atoms on the electron and hole concentrations?
Transcribed Image Text:Gold in silicon introduces an acceptor levels 0.54 eV below the conduction band edge, and a donor level 0.35 eV above the valence band. What will be the state of charge (or occupation) of the gold levels in silicon, doped with: a) High concentration of donor atoms (with respect to the gold concentration) b) High concentration of acceptor atoms? c) What is the effect of gold atoms on the electron and hole concentrations?
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