(Hor. 5.53) The breakdown strength of the oxide layer in a MOSFET gate is about 10e9 V/m. If the oxide layer is 500 Angstroms, how large a gate voltage can be sustained before the oxide layer is punctured?

(Hor. 5.53) The breakdown strength of the oxide layer in a MOSFET gate is about 10e9 V/m. If the oxide layer is 500 Angstroms, how large a gate voltage can be sustained before the oxide layer is punctured?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Question

(Hor. 5.53) The breakdown strength of the oxide layer in a MOSFET gate is about
10e9 V/m. If the oxide layer is 500 Angstroms, how large a gate voltage can be
sustained before the oxide layer is punctured?
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