i need the answer quickly For the fixed bias circuit of Fig.3, if the minimum B of the transistor is specified in the datasheet as 50, and the maximum value is 250, then determine the range of the Q-point of the transistor. +12V Rc R R 2.47kO R+R+P = 470KOERB всз37 Vc Figure 3: Practical Fixed Bias Transistor Circuit

i need the answer quickly For the fixed bias circuit of Fig.3, if the minimum B of the transistor is specified in the datasheet as 50, and the maximum value is 250, then determine the range of the Q-point of the transistor. +12V Rc R R 2.47kO R+R+P = 470KOERB всз37 Vc Figure 3: Practical Fixed Bias Transistor Circuit

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Answer ASAP. I'll upvote. Thank you. Given: The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Sketch the small signal model of transistor M3 (Hint: Is there any small signal in any terminal ofM3? If yes, then where is it? If no, then what happens to the small signal model?).
Answer as quickly as possible. I'll give upvote. Thank you. The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the gm and ro of transistor M1.
The transistor is specified to have Bf in the range of 7 to 35. The load resistance is Rc = 9 ohms. The dc supply voltage is Vcc = 180V and the input voltage to the base circuit is VB = 8V. If VCE (Sat) = 1,1 V and VBE (sat) = 1,6, determine: The value of RB that results in an ODF of 4 A. 0,7514 ohm B 0,5634 ohm C. 0,5081ohm D. 1 ohm The Power loss in the Transistor A. 35,07 W B. 44,30 W c. 40,04 W D. 23,65 W
Experiment Materials: 2N2222 transistor, 33k, 2k, 1, 10, resistors, 1uf, 10uf capacitor 1 . Make the DC analysis of the circuit mathematically. Find the values of IB, IC,VB, VBE, VC, VE, VCE. (β=100) 2 . Draw the small signal model of the circuit.
A transistor has Tox = 40 nm, VTN = 1 V,μn = 500 cm2/V ·s, L = 2 μm, and W = 20 μm.What are Kn and the saturated value of iD for thistransistor if VGS = 4 V? (b) The technology isscaled down by a factor of 2. What are the newvalues of Tox, W, L, VTN , VGS, Kn, and iD?
7. For the fixed bias circuit of Fig. 3, if the minimum p of the transistor is specified in the datasheet as 50, and the maximum value is 250, then determine the range of the Q point of the transistor
4) By drawing the small signal model of the circuit given below, we can determine the total voltage and current gain values of the circuit, without the bypass capacitor on and without the bypass capacitor. Calculate separately for the two cases as it will be in the circuit (connected to the emitter end of the transistor). (β = 100, rS = 600 Ω, R1 = 27 KΩ, R2 = 4.7 KΩ, RC = 3.3 KΩ, RE = 680 Ω, RL= 15 KΩ, VCC = 10 V)
For the given Common Emitter NPN Amplifier, the transistor made of Germanium diodes, βDC=80,VCC = 16 volts, R1= 62 KΩ, R2= 9.1 KΩ, RC= 3.9 KΩ, RE= 0.68 KΩ. a) Name the type of biasing used in the above circuit? b) Find VE? c) Find VCE? d) Find VC? e) What is the name of the capacitors C1, C3and C2?
Please answer ASAP, I'll upvote... The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the drain current of M2 given that IBIAS = 2mA and VOUT = 2.5V.
3) If IDSS = 8 mA and VP = - 6 V in the circuit with JFET transistors given below, calculate the current and voltage values of ID , VDS , VGS, VS, VDG and VD. (R1 = 910 KΩ, R2 = 220 KΩ, RD = 2.2KΩ, Rss = 1.2 KΩ, VDD = 18 V)
1. Discuss the common source characteristics of the n-channel FET used. 2. From the characteristics, obtain the following parameters, Ipss, gn and V. 54 Exp.No. (8): Field Effect Transistor Characteristics 3. Check equation (1) for Vgs = (-0.4), (-0.8) V. 4. Deduce equation (2) from the definition of g,, and using equation (1). 5. Obtain the value of g, of the point Vgs = - 0.8V from the transfer characteristics, then check equations (2) and (3).
Since Vcc = 12 V, Vin = 690 mV, RB = 780 kΩ, RC1 = 27.9 Ω, RC2 = 25.4 Ω, RE = 470 Ω, RL = 47 Ω and β1 = β2 = 100 in the circuit in the figure Find the current (IL) flowing through RL? NOTE-1: VBE1 = VBE2 = 0.7 V will be taken. NOTE-2: Output impedances of transistors (r0) will be neglected. a. 16,56 mA b. 23,46 mA c. 8,28 mA d. 17,94 mA e. 20,70 mA f. 13,80 mA g. 26,22 mA h. 11,04 mA