if ro is the radiys of sphere contains one electrons in electron gas, proved that coulomb self energy for elec t vohrc distribution is 3e?

Q: A metal object with Length lo m and Area(o-smm2) and vesistence of o-34 2 Apetential voltage 5 Velt.…

A: Solution: given that L = 10 m A = 0.5 mm2 = 0.5x10-6 m2 R = 0.34 Ohm V = 5 V electron density =…

Q: For the tronsistor in thhe folowing figure.itB is (0.02mA). B H100, then Rc value is:

A: Answer              5 K ohm

Q: the mog netud of Qrelbation in the lonzontelduection of Rokefile moton (an be appioimated to - m/s?…

A: In projectile motion the only force acts on the projectile is the vertically downward gravity.

Q: Prove that the density of states is the same size and the wavelength range of 2+ di toa to be g(1)da…

A:

Q: Diodes are frequently used as temperature sensors. An experiment is set up in the lab and 20% of the…

A: diode conduction formula is I=I0eqVkT-1

Q: Calculate the input bias current at each input of an op-amp having specified values of I1o IiB = 20…

A:

Q: WIRE #1 WIRE #2 0Z/////// Eradius Both wites are geare hically idenhial, have same d and r, same…

A:

Q: vn below given that the potent

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Q: Tan the atomic absorptim determuatiun of uranuim, IS absorbance at 351 5nm and the Concen tratiun in…

A: The extent of ionisation will be more significant when the concentration of uranium decreases since…

Q: Suppose the temperature isT= 300 %. Determine the probatility trat a state 3kt above the Fermi…

A: The probability that an energy state is occupied by electron above fermi level is given by…

Q: if the energy gap is between( 1.2 and 5) eV this is a

A:

Q: Calculate the space width for a p-n junction when a reverse bias with 3V is applied at T=350K.…

A: The total space width for a p-n junction when reverse bias voltage is applied is given the following…

Q: H.w/ find the 0/p of PCM for i/p signal x(t) = 3.5sin(2000nt), the sampling frequency 5 kHz for…

A: We have givenInput signal x(t)=3.5sin(2000πt)andSampling frequency (f)= 5 kHzQuantization level=8We…

Q: Example 3.7. Find the time required to deliver a charge of 200 Ah through a single- a se half-wave…

A:

Q: Discuss the avalanche effect to diodes along with the depletion regions in forward and reverse bias.

A: The avalanche effect is also known as avalanche breakdown. It  happens in a diode only when  a high…

Q: lonsider an Ponic Crystal is mposed 4N fons both Pasitive and n with negative oppositely Chsigect…

A: The ions present in the ionic crystal = 4N ions. The charge on both positive and negative ion = ±q.…

Q: If (EF) is located at Ec, determine the probability of finding electrons in states at Ec + kT.

A: Given Ef is located in Ec. The probability of finding the electrons is given by Fermi-Dirac…

Q: write the energy band diagram df P- ty pe and N-lype f Seml conductor.

A: In p-type semiconductor, the density of holes is greater than the density of electrons while in…

Q: The thickness of the PN depletion region increases when diode is

A: The depletion region of a PN junction diode is a region of immobile positive and negative charges…

Q: What is the ohmmeter reading for cach configuration in Fig. 6.73?

A:

Q: Find the static and dynamic resistance of a p-n germanium junction for an applied bias of 0.6V at…

A:

Q: The energy of 2nd level in H-atom is and reduced mass of diatomic molecule equal to (put the…

A: The energy of a Hydrogen atom is given by, Energy of nth level, En=-13.6  n2 eV...(1) Where n is the…

Q: äböi For the circuit shown below, calculate Vout if the saturation current for the * diode is 50nA,…

A:

Q: Calculate the amount of gate-to- source voltage necessary to regulate a JFET's drain current at a…

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Q: What is the advantage of field-effect transistor (FET) according to bipolar Junction Transistor…

A: FET Stands for Field effect transistor. FETs are voltage-sensitive devices with extremely high input…

Q: An NPN transistor has beta value of 200. Calculate the base current required to switch a resistive…

A: Given : beta value, β = 200            Collector current, Ic = 4 mA

Q: Discuss PN junction diode and explain the barrier potential across the junction?

A: A PN-junction diode is formed when a p-type semiconductor is fused to an n-type semiconductor…

Q: The exchange current density of Pt / H: , H° (aq) is 0.79 mA/cm. What current will flow through…

A: Given data: Exchange current density is io=0.79 mA/cm2. Potential drop is η=5 mV=0.005 V.…

Q: 10 " cm . T= 300

A:

Q: Sketch v, for each network of Fig. 2.161 for the input shown. Would it be a good approxima- tion to…

A:

Q: The relaxation time τ is nearly independent of applied E field whereas it changes significantly with…

A: Relaxation time is the time interval between two successive collisions of the electrons.

Q: The time needed to collect all the positive ions in GM counter filled with air at 740 mm Hg is 50…

A: Given : time needed to collect +ve ions, t = 50 × 10— 6 s radius of cathode, b = 70 × 10—6 m radius…

Q: Based on the principle that the bility of stimulated emission is to the probability of absorption,…

A:

Q: For a BJT transistor if VCC=8V, VCE= 8V, the transistor will operate in region O cutoff active…

A: For BJT transistor , VCE = VCC  - ICRC

Q: : find the relaxion time for electron if the mobility of ele 00cm²v's' and the / m, =0.26?

A: The relaxation time is given as T = u M/e Where u is mobility of electron M is mass of electron E is…

Q: ollowing dat

A: Projectile motion can be divided into x component and y component

Q: نقطة واحدة For a PN junction diode,-5 the current in reverse bias may be

A: For a PN junction diode , -5 the current is reverse bias  Because the negative terminal of the…

Q: A GaAs sample with nna = 1015 cm-3 is illuminated with light and 1013 electron-hole pairs/cm? are…

A:

Q: Find the position of the intrinsic Fermi level with respect to the center of the bandgap in Germinum…

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Q: Sketch the reverse bias characteristics for a pn junction diode and mention the importance of peak…

A: We know that, Reverse bias PN junction diode : When the n-type is attached to the positive side of…

Q: Discuss the forward and reverse biasing characteristics of PN Junction diode.

A: SOlution: To brief the characterstics of the forwards and reverse PN jnuction diode.

Q: Write the electron configuration for Fl (atomic number 114). How many valence electrons does it…

A: Given, Element - Fl Atomic number - 114