In a very high quality homo-junction pn" LED made of a direct band gap semiconductor, the internally generated power is 5.43 uW with the internally emitted photons of wavelengthA0.6 um. If the radiative recombination lifetime is 13 ms and the nonradiative is 83 ms. The device electron current will be: a. 2.272e-6 А b. 1.444e-5 A c. 8.688e-5 A d. 3.421e-4 A e. 2.878e-5 A

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Optoelectronic
In a very high quality homo-junction pn LED made of a direct band gap semiconductor, the internally
generated power is 5.43 aW with the internally emitted photons of wavelengthA-0.6um. Ifthe radiative
recombination lifetime is 13 Ps and the nonradiative is 83 ms. The device electron current will be:
O a. 2.272e-6 A
b. 1.444e-5 A
C. 8.688e-5 A
d. 3.421e-4 A
e. 2.878e-5 A
Transcribed Image Text:In a very high quality homo-junction pn LED made of a direct band gap semiconductor, the internally generated power is 5.43 aW with the internally emitted photons of wavelengthA-0.6um. Ifthe radiative recombination lifetime is 13 Ps and the nonradiative is 83 ms. The device electron current will be: O a. 2.272e-6 A b. 1.444e-5 A C. 8.688e-5 A d. 3.421e-4 A e. 2.878e-5 A
: Si, Ge, GaAs Parameters and Universal Constants
UNIVERSAL CONSTANTS
Properties
SEMICONDUCTOR
6.63 × 10–34
9.11 × 10¬31 Kg
h
J.s
Si
Ge
GaAs
Eg (eV)
n; (cm-3)
Hn (cm²/V – s)
Hp (cm² /V – s)
Ne (cm-3)
N. (cm-³)
m/m.
m;/m.
€r (F/m)
1.1
0.67
1.42
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
1.602 × 10-19 C
1500
3900
8500
8.85 × 10–12
F/m
€o
450
1900
400
1.05 × 10–34 J – s
1.04 × 1019 | 4.45 × 1017
6 x 1018
2.78 × 1019
8.6 × 10–5 eV/K
26 mV (T = 300 K)
26 тeV (T 3D 300 К)
3 x 108 m/s
K
9.84 × 1018
7.72 × 1018
KT/q
0.082
0.98
0.067
KT
0.28
0.49
0.45
11.7
16
13.1
Nair = 1
NGaAs = 3.66
Some useful relations
E ALGA1-nAs (x) = 1.424 + 1.247x
EgIn.Gaj-z As (x) = 0.36 + 1.064.x
1 eV = 1.602 × 10-19 J
1 KG = 1 × 10-5 Wb/cm²
Transcribed Image Text:: Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR 6.63 × 10–34 9.11 × 10¬31 Kg h J.s Si Ge GaAs Eg (eV) n; (cm-3) Hn (cm²/V – s) Hp (cm² /V – s) Ne (cm-3) N. (cm-³) m/m. m;/m. €r (F/m) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 1.602 × 10-19 C 1500 3900 8500 8.85 × 10–12 F/m €o 450 1900 400 1.05 × 10–34 J – s 1.04 × 1019 | 4.45 × 1017 6 x 1018 2.78 × 1019 8.6 × 10–5 eV/K 26 mV (T = 300 K) 26 тeV (T 3D 300 К) 3 x 108 m/s K 9.84 × 1018 7.72 × 1018 KT/q 0.082 0.98 0.067 KT 0.28 0.49 0.45 11.7 16 13.1 Nair = 1 NGaAs = 3.66 Some useful relations E ALGA1-nAs (x) = 1.424 + 1.247x EgIn.Gaj-z As (x) = 0.36 + 1.064.x 1 eV = 1.602 × 10-19 J 1 KG = 1 × 10-5 Wb/cm²
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