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18 16 A silicon p-n-p transistor has impurity concentrations of 5x10", 2x10", and 10 cm in the emitter, base, and collector, respectively. The base width is 1.0 um, and the device cross sectional area is 0.2 mm?. When the emitter-base junction is forward biased to 0.5 V, and the base-collector junction is reverse biased to 5 V, calculate (a) calculate the neutral base width, and (b) the minority carrier concentration at the emitter-base junction.

18 16 A silicon p-n-p transistor has impurity concentrations of 5x10", 2x10", and 10 cm in the emitter, base, and collector, respectively. The base width is 1.0 um, and the device cross sectional area is 0.2 mm?. When the emitter-base junction is forward biased to 0.5 V, and the base-collector junction is reverse biased to 5 V, calculate (a) calculate the neutral base width, and (b) the minority carrier concentration at the emitter-base junction.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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18 17 16 A silicon p-n-p transistor has impurity concentrations of 5x10", 2x10", and 10 collector, respectively. The base width is 1.0 µum, and the device cross sectional area is 0.2 mm. When the emitter-base junction is forward biased to 0.5 V, and the base-collector junction is reverse biased to 5 V, calculate (a) calculate the neutral base width, and (b) the minority carrier concentration at the emitter-base junction. cm in the emitter, base, and
Transcribed Image Text:18 17 16 A silicon p-n-p transistor has impurity concentrations of 5x10", 2x10", and 10 collector, respectively. The base width is 1.0 µum, and the device cross sectional area is 0.2 mm. When the emitter-base junction is forward biased to 0.5 V, and the base-collector junction is reverse biased to 5 V, calculate (a) calculate the neutral base width, and (b) the minority carrier concentration at the emitter-base junction. cm in the emitter, base, and
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