In a very high quality homo-junction pn* LED made of a direct band gap semiconductor, the internally generated power is 3 µW with the internally emitted photons of wavelength 2= 0.6 µm. If the radiative recombination lifetime is 13 ns and the nonradiative is 83 ns. The device electron current will be: а. 1.255е-6 А O b. 7.980e-6 A С. 4.800е-5 А O d. 1.890e-4 A O e. 1.590e-5 A

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In a very high quality homo-junction pn*
LED made of a direct band gap
semiconductor, the internally generated
power is 3 µW with the internally emitted
photons of wavelength 2 = 0.6 µm. If the
%3D
radiative recombination lifetime is 13 ns and
the nonradiative is 83 ns. The device electron
current will be:
О а. 1.255е-6 А
b. 7.980e-6 A
с. 4.800е-5 А
d. 1.890e-4 A
е. 1.590е-5 А
Transcribed Image Text:In a very high quality homo-junction pn* LED made of a direct band gap semiconductor, the internally generated power is 3 µW with the internally emitted photons of wavelength 2 = 0.6 µm. If the %3D radiative recombination lifetime is 13 ns and the nonradiative is 83 ns. The device electron current will be: О а. 1.255е-6 А b. 7.980e-6 A с. 4.800е-5 А d. 1.890e-4 A е. 1.590е-5 А
ll会O0
75% 9:07
4G
SiGeGaAsprope.
Prof. O M Khrois
May 2, 2020
: Si, Ge, GaAs Parameters and Universal Constants
UNIVERSAL, CONSTANTS
6.63 x 10-4 J
9.11 x 10-31 Kg
Propertics
SEMICONDUCTOR
Si
Ge
GaAs
E, (eV)
n, (cm-)
Hn (em" /V - s)
Hy (em/V - s)
N, (em )
N, (em 3)
m/m.
1.1
0.67
1.42
3.14
1.5 x 1010 2.3 x 10
1.8 x 10"
1.602 x 10-10 C
8.85 x 10-12 F/m
1.05 x 104 J -
8.6 x 10-5 eV/K
26 mV (T = 300 K)
1500
3900
8500
450
1900
400
2.78 x 1019 1.04 x 1019 4.45 x 107
7.72 x 1015
9.84 x 1018
6x 1018
KT/4
0.082
0.98
0.067
KT
26 meV (T = 300 K)
m/m.
G (F/m)
0.28
0,49
0.45
3 x 10 m/s
11.7
16
13.1
Hair =!
GaAs =3.66
Some useful relations
EgAL, GaA(r) = 1.424 + 1.247..
Egn.Ga-1A(ar) = (0.36 + 1.064r
1eV = 1.602 x 10-19 1
1 KG = 1 x 10- wb/cm
1
Transcribed Image Text:ll会O0 75% 9:07 4G SiGeGaAsprope. Prof. O M Khrois May 2, 2020 : Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL, CONSTANTS 6.63 x 10-4 J 9.11 x 10-31 Kg Propertics SEMICONDUCTOR Si Ge GaAs E, (eV) n, (cm-) Hn (em" /V - s) Hy (em/V - s) N, (em ) N, (em 3) m/m. 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 10 1.8 x 10" 1.602 x 10-10 C 8.85 x 10-12 F/m 1.05 x 104 J - 8.6 x 10-5 eV/K 26 mV (T = 300 K) 1500 3900 8500 450 1900 400 2.78 x 1019 1.04 x 1019 4.45 x 107 7.72 x 1015 9.84 x 1018 6x 1018 KT/4 0.082 0.98 0.067 KT 26 meV (T = 300 K) m/m. G (F/m) 0.28 0,49 0.45 3 x 10 m/s 11.7 16 13.1 Hair =! GaAs =3.66 Some useful relations EgAL, GaA(r) = 1.424 + 1.247.. Egn.Ga-1A(ar) = (0.36 + 1.064r 1eV = 1.602 x 10-19 1 1 KG = 1 x 10- wb/cm 1
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