In an extrinsic semiconductor, both n type and p type impurities are mixed. If 1.5x1010/cm3 is the intrinsic carrier concentration and 2.25x1016/cm3 is the concentration of p type impurities mixed, then what will be concentration of n type impurities?

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Chapter4: Transmission Line Parameters
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Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...
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In an extrinsic semiconductor, both n type and p type impurities are mixed. If 1.5x1010/cm3 is the intrinsic carrier concentration and 2.25x1016/cm3 is the concentration of p type impurities mixed, then what will be concentration of n type impurities?

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