In an integrated circuit, a capacitor is formed by growing silicon dioxide layer of thickness 1 [um] with E,=4 over the conducting silicon substrate and covering it with a metal electrode with area S. Determine the size of the capacitor if a capacitance of 2 [nF] is needed. -Use numbers when answering, rouding to the hundredths in the format 0.00 -Input your answers in units of [cm²]

In an integrated circuit, a capacitor is formed by growing silicon dioxide layer of thickness 1 [um] with E,=4 over the conducting silicon substrate and covering it with a metal electrode with area S. Determine the size of the capacitor if a capacitance of 2 [nF] is needed. -Use numbers when answering, rouding to the hundredths in the format 0.00 -Input your answers in units of [cm²]

Physics for Scientists and Engineers, Technology Update (No access codes included)

9th Edition

ISBN:9781305116399

Author:Raymond A. Serway, John W. Jewett

Publisher:Raymond A. Serway, John W. Jewett

Chapter25: Electric Potential

Section: Chapter Questions

Problem 25.1OQ: In a certain region of space, the electric field is zero. From this fact, what can you conclude...

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