In an unbiased p-n junction, holes diffuse from the p-region to n-region because A- free electrons in the n-region attract them B- they move across the junction by the potential difference C-hole concentration in p-region is more as compared to n-region. D- all of these Which of the following statements is incorrect for the depletion region of a diode? A- There the mobile charges exist. B- Equal number of holes and electrons exist, making the region neutral. C- Recombination of holes and electrons has taken place. D- None of these Potential barrier developed in a junction diode opposes the flow of A- minority carrier in both regions only B- majority carriers only C- electrons in p region D- holes in p region

In an unbiased p-n junction, holes diffuse from the p-region to n-region because A- free electrons in the n-region attract them B- they move across the junction by the potential difference C-hole concentration in p-region is more as compared to n-region. D- all of these Which of the following statements is incorrect for the depletion region of a diode? A- There the mobile charges exist. B- Equal number of holes and electrons exist, making the region neutral. C- Recombination of holes and electrons has taken place. D- None of these Potential barrier developed in a junction diode opposes the flow of A- minority carrier in both regions only B- majority carriers only C- electrons in p region D- holes in p region

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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