A semiconductor junction diode, we can say that: a) The diode is composed of two types of crystal, one positive side (Anode) and the other P-type (Cathode) side, allowing the flow of charge from N to P. b) It is an electronic component that has two terminals, the Anode (with material of type N - Electrons) and Cathode (with material of type P - Gaps), which allows the flow of charge from P to N. c) It is the union of a P-type crystal and an N-type crystal, thus creating a PN junction, thus creating a simple solid-state device, the junction semiconductor diode. d) At a temperature of 25 degrees Celsius, the depletion barrier has a potential barrier, which for silicon is 0.7 volts and for germanium it is 0.3 volts. e) None of the above options is correct. Choose one of the alternatives

Power System Analysis and Design (MindTap Course List)
6th Edition
ISBN:9781305632134
Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Chapter4: Transmission Line Parameters
Section: Chapter Questions
Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...
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A semiconductor junction diode, we can say that:

a) The diode is composed of two types of crystal, one positive side (Anode) and the other P-type (Cathode) side, allowing the flow of charge from N to P.
b) It is an electronic component that has two terminals, the Anode (with material of type N - Electrons) and Cathode (with material of type P - Gaps), which allows the flow of charge from P to N.
c) It is the union of a P-type crystal and an N-type crystal, thus creating a PN junction, thus creating a simple solid-state device, the junction semiconductor diode.
d) At a temperature of 25 degrees Celsius, the depletion barrier has a potential barrier, which for silicon is 0.7 volts and for germanium it is 0.3 volts.
e) None of the above options is correct.

Choose one of the alternatives

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