Inen a pure semiconductor doped With pentavalent impurity, then the number densities of the electrons and the holes respectively are (A)increased, increased (B)increased, unchanged (C)increased, decreased (D)decreased, decreased

Inen a pure semiconductor doped With pentavalent impurity, then the number densities of the electrons and the holes respectively are (A)increased, increased (B)increased, unchanged (C)increased, decreased (D)decreased, decreased

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 3Q

See similar textbooks

Related questions

Q: A useful mode of operation of a transistor is in the common -emitter configuration In this mode,…

A: Common emitter configuration is one of the configurations where the emitter is connected between the…

Q: Calculate the transistor’s Collector current if it is driven by a small Base current of 1.96mA with…

Q: For the tronsistor in thhe folowing figure.itB is (0.02mA). B H100, then Rc value is:

A: Answer 5 K ohm

Q: The maximum power dissipation of a transistor is 100mW. If VCE = 20V, what is the maximum collector…

Q: Can we take one slab of p-type semiconductor and physically join it to another n-type semiconductor…

Q: The voltage of a BYZ83 type Zener diode is given as V, = 20v, power P, 300mW, and Zener resistance…

A: Zener parameters areVz=20VPz=300 mWPz=300×10-3WRz=20Ω

Q: When the current diode is large, the bias is forward inverse O poor reverse Other:

Q: Discuss the forward region, reverse region, breakdown region and knee voltage of silicone diode…

A: SOlution: Discuss the forward region, reverse region, breakdown region and knee voltage

Q: A silicon wafer is uniformly doped p-type with NA = 1015 / cm³, at T = 0 K the equilibrium holes…

A: Given: The silicon wafer (Intrinsic carrier) concentration NA = 1015 /cm3. To find: The equilibrium…

Q: Determine VL, IL, IZ and IR considering that the following values for R = 2.7 k ohms, RL = 450…

Q: ( Si ) is type of compound semiconductor : O true O false

Q: Q1/ At 300K, the intrinsic concentration of Ge is 2.5 x 1019 m-3. Given thet the mobility of…

A: Here at given temperature at 300 k the intrinsic concentration of th Ge is 2.5 × 10¹⁹ m-³. It also…

Q: Calculate the space width for a p-n junction when a reverse bias with 3V is applied at T=350K.…

A: The total space width for a p-n junction when reverse bias voltage is applied is given the following…

Q: If the ratio of mopility of electrons to mopility of holes is 3:1 and the condicutivity of impure…

Q: How is p-type semiconductor different from n-type?

A: When a five-composite atom of pure silicon crystal is inserted as an adulterant, then the four…

Q: Explain why at high temperature, an extrinsic semiconductor behaves like an intrinsic semiconductor.

A: A small amount of a suitable impurity is added to the pure semiconductor; the conductivity of the…

Q: :/ The only parameter that affects the conduction in semiconductors is temperature * O True False…

A: Semiconductors act as insulators at low temperatures and conductors at higher temperatures.…

Q: In a transistor, B = 45, the voltage across 5 k Q resistor which is connected in the %3D collector…

A: In the Question given current gain , resistance and collector voltage and we have to find the base…

Q: Example 3.7. Find the time required to deliver a charge of 200 Ah through a single- half-wave diode…

Q: PN-junction diode works as an insulator, when connected in?

A: When the PN junction diode is connected in reverse bias no current flows and works as an insulator.…

Q: Explain the need of doping a pure semiconductor.

A: Doping is a process of adding unwanted impurities into a semiconductor device. Doping is done to…

Q: äböi For the circuit shown below, calculate Vout if the saturation current for the * diode is 50nA,…

Q: What is the advantage of field-effect transistor (FET) according to bipolar Junction Transistor…

A: FET Stands for Field effect transistor. FETs are voltage-sensitive devices with extremely high input…

Q: What is the difference between N type and P type semiconductors in terms of composition?

A: Difference between N type and P type semiconductors in terms of their composition is as follows:…

Q: Distinguish between an intrinsic semiconductor and p-type semiconductor. Give reason, why, a p-type…

A: Intrinsic semiconductor : Intrinsic semiconductors are the pure form of semiconductors. Electrons…

Q: when a silicon diode is reverse biased , it voltage equal : O 0.7 V O -0.7 V O ov O non of the…

Q: A zener diode is specified as having a brealdown voltage 9.1V, with a maximum power of 364mW. What…

Q: O 3/ A / A doped semiconductor has 10 billion silicon atoms and 15 million pentavlent atoms. If the…

A: Semiconductors are materials whose conductivity falls in between conductors and insulators. Charge…

Q: What are the major differences between MOS and BJT transistors?

A: The major differences between MOS or MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) and…

Q: In the given figure, assuming all transistors are minimum size with channel resistance R-8kN and…

Q: A silicon wafer is uniformly doped p-type with NA = 1015 / cm³, at T=0K the equilibrium holes…

A: The temperature T= 0K implies absolute temperature. At this temperature no free electrons and holes…

Q: For a BJT transistor if VCC=8V, VCE= 8V, the transistor will operate in region O cutoff active…

A: For BJT transistor , VCE = VCC - ICRC

Q: Distinguish between an intrinsic and extrinsic semiconductor.

A: Intrinsic semiconductor are pure and natural semiconductors for example Ge and Si. The…

Q: In the motion of a diatomic molecule, the molecule oscillates as if there's a spring connecting the…

Q: نقطة واحدة For a PN junction diode,-5 the current in reverse bias may be

A: For a PN junction diode , -5 the current is reverse bias Because the negative terminal of the…

Q: Calculate the transistor collector current if it is driven by a small base current of 7mA with a…

A: Answer :- Given Base Current( IB) = 7 mA Emitter Current ( IE) = 10 mA Collector Current (IC) = ?…

Q: For the circuit shown in Fig. 4, if the diode D is ideal, calculate its steady state avera current…

A: Given : Frequency of AC voltage, f = 50 Hz Resistance , R = 100 Ω…

Q: Calculate the gain at the onset of coherent light generation for a GaAs diode. Assume a = 15 cm',…

Q: Difference between intrinsic and extrinsic semiconductors?

A: Intrinsic Semiconductor is a pure form of the semiconductor as there is no addition of impurity…

Question

Class 10 physics

When a pure semiconductor is doped with pentavalent impurity,
then the number densities of the electrons and the holes respectively are
(A)increased, increased
(B)increased, unchanged
(C)increased, decreased
(D)decreased, decreased

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

SEE SOLUTION Check out a sample Q&A here

Step 1

VIEW

Step 2

VIEW

Step by step

Solved in 2 steps

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, physics and related others by exploring similar questions and additional content below.

Similar questions

The measured density of a CsCl crystal is 3.988 g/cm3. What is the equilibrium separate distance of Cs+ and Cl- ions?
What is the main difference between an insulator and a semiconductor?
The measured density of a NaF crystal is 2.558 g/cm3 . What is the equilibrium separate distance of Na+ and Flions?
As the doping density of a semiconductor increases, the :mobility generally Stays the same Increases Decreases First increases, then decreases First decreases, then increases
Find the equilibrium electron and hole concentration and the location of the Fermi level for a silicon sample at27∘Cdoped uniformly with5×1015 cm−3phosphorus atoms and4×1015 cm−3boron atoms.
In an N-type semiconductor at T = 300 K, the electron concentration varies linearly from 2 x 10^18 to 5 X 10^17 per cc over a distance of 1.5 mm and the diffusion current density is 360 A/cm^2. Find the mobility of electrons.
Why n-type and p-type semiconductors are electrically neutral?
Why Intrinsic Semiconductor materials are the bad conductors of electricity? Elaborate the process to make them full conductors?
the carrier distribution in the conduction band is:nc(E) = gc(E) . f(E) a) For a non-degenerate semiconductor, show that nc(E) has a maximum at E = Ec + ½ kT b) What is the ratio of carrier distribution at E = Ec + kT to that of the max value ?
Determine the thermal-equilibrium concentrations of electrons and holes in silicon at T =300 K if the Fermi energy level is 0.2 eV above the valence-band energy. Assume that the bandgap of semiconductor is 1 eV. Nc=2x1019 cm-3 and Nv=1x1019 cm-3. Take kT=25.875 meV