Note: Use Kn'= 100 µA/V?, Kp' = 40 µA/V², VIN=0.6 V, and VIP =-0.6 V unless otherwise indicated. 1) The static voltage transfer characteristic for a practical CMOS inverter is given in the below figure. Estimate the values of VH , VL ,VOH, VOL, VH, VIL, NMĦ, and NML . vo 4.0 V- 2.0 V- Ov O V 1.0 V 2.0 V 3.0 V 4.0 V

Note: Use Kn'= 100 µA/V?, Kp' = 40 µA/V², VIN=0.6 V, and VIP =-0.6 V unless otherwise indicated. 1) The static voltage transfer characteristic for a practical CMOS inverter is given in the below figure. Estimate the values of VH , VL ,VOH, VOL, VH, VIL, NMĦ, and NML . vo 4.0 V- 2.0 V- Ov O V 1.0 V 2.0 V 3.0 V 4.0 V

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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What are the noise margins for a symmetrical CMOS inverter operating with VDD = 3.3 V and VTN = −VTP = 0.75 V? (b) Repeat for a CMOS inverter having (W/L)N = (W/L)P operating with VDD = 3.3 V and VTN = −VTP = 0.75 V.
(a) What is the power-delay product for a symmetrical CMOS inverterwith (W/L)N =2/1, (W/L)P =5/1, C =0.25 pF,VDD =3.3 V, VTN =0.75 V, and VTP =−0.75 V? (b) Estimate the maximum switchingfrequency for this inverter. (c) Howmuch powerdoes the inverter dissipate if it is switching at thefrequency found in (b)?
A CMOS inverter shown in Figure below, with kn = 10, k, = 100 JA/V?, and V, = 0.5V having a sinusoidal signal source with Thevenin equivalent voltage of 0.075V as peak amplitude and resistance of 150k. Determine the signal values at node A with V = +1.5V. (a) 6.82m V (b) 8.62mV (c) 6.80m V (d) 8.80mV
(a)VDD = 1.8 V, VTN = 0.45 V and VTP = −0.45 V. .Calculate the voltage at which vO = vI for a CMOS inverter with Kn = Kp. (b)VDD = 2.5 V, VTN = 0.75 V and VTP = −0.65 V. What is the current IDD from the power supply for vO = VI if (W/L)N = 2/1? (c)VDD = 2.5 V, VTN = 0.65 V and VTP = −0.75 V.What is the current IDD from the power supply for vO = VI if (W/L)N = 2/1?
(a) Calculate the voltage at which vO = vI for a CMOS inverter with Kn = Kp. (Hint: Alwaysremember that iDN = iDP.) Use VDD = 2.5 V, VTN = 0.6V, VTP = −0.6V. (b) What is the currentIDD from the power supply for vO = VI if (W/L)N = 2/1? (c) Repeat the calculation in (a)for a CMOS inverter with Kn = 2.5Kp. (d) What is the current IDD from the power supply for vO = VI if (W/L)N = 2/1?
1.Design a reference CMOS inverter with following design specifications:VDD = 2.5V, VTN = 0.6V, VTp = -0.6V, Kn’ = 100X10^-6 A/V2,Kp’ = 40X10^-6 A/V2, C = 0.2pF,tp = 250pS.
Design an asymmetrical inverter to meet the delay specification a symmetrical CMOS reference inverter to provide a propagation delay of 400 ps fora load capacitance of 200 fF. Use VDD =2.5 V, VTN =0.60 V, and VTP =−0.60 V.with (W/L)P = (W/L)N .
Find the ratio of hole mobility to electron mobility of a CMOS inverter given that the beta ratio of pull-up network to pulldown network is 1.5 (Assume that W/L ratio of pMOS is 3 times greater than that of nMOS and all other parameters are same for both) Assuming the supply voltage to be 3V draw a suitable DC transfer characteristic curve of the CMOS inverter.
A CMOS inverter is to be designed to drive a single TTL inverter . When vO = VL , the CMOS inverter must sink a current of 1.5 mA and maintain VL ≤0.6 V.When vO ≥ VH , the CMOS inverter must source a current of 60 A and maintain VH ≥2.4 V. What are the minimum W/L ratios of the NMOS and PMOS transistors required to meet these specifications?Assume VDD = 5 V.
Draw the schematic for a four-input NAND gatewith a depletion-mode load device. What are theW/L ratios of all the transistors, based on the reference inverter ?
(a) The n-well in a CMOS process covers an area of 1 cm× 0.5 cm, and the junction saturation current density is 500 pA/cm2. What is the total leakage current of the reverse-biased well? (b) Suppose the drain and source regions of the NMOS and PMOS transistors are 2µm × 5µm, and the saturationcurrent density of the junctions is 100 pA/cm2. If the chip has 20 million inverters, what is the total leakage current due to the reverse-biased junctions when vO =2.5 V? Assume VDD =2.5 V and VSS =0 V. (c) When vO =0 V?
Plot a graph of the voltage transfer characteristicfor an ideal inverter with V+ = 2.5 V, V− = 0 V, andVREF = 0.8 V. Assume VH = V+ and VL = V−.