Please can you explain and show every calcul and details I am confused how to solve this + NewOsuBGiven a silicon diode that has the following properties: N₁ in P = 2x10¹7 cm-³,No in N= 2x1016 cm-3, junction area = 2x10-³ cm²; lifetime of holes in N = 10us; lifetime of electrons in P = 50 µs; D₁ of electrons in P = 34 cm²/s; D, ofholes in N = 13 cm²/s. For V₁ = 0.66 V calculate J(-x), Jp(x) and the totaldiode current. Operation is at 300 K.n

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Electrical Engineering

Please can you explain and show every calcul and details I am confused how to solve this

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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Please can you explain and show every calcul and details I am confused how to solve this

+ New
O
su
B
Given a silicon diode that has the following properties: N₁ in P = 2x10¹7 cm-³,
No in N= 2x1016 cm-3, junction area = 2x10-³ cm²; lifetime of holes in N = 10
us; lifetime of electrons in P = 50 µs; D₁ of electrons in P = 34 cm²/s; D, of
holes in N = 13 cm²/s. For V₁ = 0.66 V calculate J(-x), Jp(x) and the total
diode current. Operation is at 300 K.
n

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