Problem 3. The following two questions relate to residual stress. (1) Explain why thermally grown oxide is compressive, and estimate the stress (at room temp.) in an oxide layer grown at 1025°C. Hint: asi = 2.3 x 106 K1, asio2 = 0.5 x 106 K1, Esio2 = 50 GPa. (2) Assume you just deposited a 1 um PECVD nitride (E = 210 GPa, v = 0.24) layer on a 525 µm thick, 125 mm diameter Si wafer (assume E = 166 GPa, v = 0.24). The center deflection from the measurement system is 80 um downwards. Estimate the stress in the film, and indicate whether tensile or compressive. %3D 80 µm 1 um Nitride Si Wafer
Problem 3. The following two questions relate to residual stress. (1) Explain why thermally grown oxide is compressive, and estimate the stress (at room temp.) in an oxide layer grown at 1025°C. Hint: asi = 2.3 x 106 K1, asio2 = 0.5 x 106 K1, Esio2 = 50 GPa. (2) Assume you just deposited a 1 um PECVD nitride (E = 210 GPa, v = 0.24) layer on a 525 µm thick, 125 mm diameter Si wafer (assume E = 166 GPa, v = 0.24). The center deflection from the measurement system is 80 um downwards. Estimate the stress in the film, and indicate whether tensile or compressive. %3D 80 µm 1 um Nitride Si Wafer
Precision Machining Technology (MindTap Course List)
2nd Edition
ISBN:9781285444543
Author:Peter J. Hoffman, Eric S. Hopewell, Brian Janes
Publisher:Peter J. Hoffman, Eric S. Hopewell, Brian Janes
Chapter2: Measurement, Materials, And Safety
Section2.7: Heat Treatment Of Metals
Problem 12RQ: In addition to standard PPE, what specific PPE and safety precautions should be used during heat...
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