Problem 3. The following two questions relate to residual stress. (1) Explain why thermally grown oxide is compressive, and estimate the stress (at room temp.) in an oxide layer grown at 1025°C. Hint: asi = 2.3 x 106 K1, asio2 = 0.5 x 106 K1, Esio2 = 50 GPa. (2) Assume you just deposited a 1 um PECVD nitride (E = 210 GPa, v = 0.24) layer on a 525 µm thick, 125 mm diameter Si wafer (assume E = 166 GPa, v = 0.24). The center deflection from the measurement system is 80 um downwards. Estimate the stress in the film, and indicate whether tensile or compressive. %3D 80 µm 1 um Nitride Si Wafer

Precision Machining Technology (MindTap Course List)
2nd Edition
ISBN:9781285444543
Author:Peter J. Hoffman, Eric S. Hopewell, Brian Janes
Publisher:Peter J. Hoffman, Eric S. Hopewell, Brian Janes
Chapter2: Measurement, Materials, And Safety
Section2.7: Heat Treatment Of Metals
Problem 12RQ: In addition to standard PPE, what specific PPE and safety precautions should be used during heat...
icon
Related questions
Question
Please solve
Problem 3. The following two questions relate to residual stress.
(1) Explain why thermally grown oxide is compressive, and estimate the stress (at room temp.) in an
oxide layer grown at 1025°C. Hint: asi = 2.3 x 106 K1, asio2 = 0.5 x 106 K?, Esio2 = 50 GPa.
%3D
0.24) layer on a 525 um
(2) Assume you just deposited a 1 um PECVD nitride (E = 210 GPa, v =
thick, 125 mm diameter Si wafer (assume E = 166 GPa, v = 0.24). The center deflection from the
measurement system is 80 um downwards. Estimate the stress in the film, and indicate whether
tensile or compressive.
%3D
80 μm
1 μm Nitride
Si Wafer
Transcribed Image Text:Problem 3. The following two questions relate to residual stress. (1) Explain why thermally grown oxide is compressive, and estimate the stress (at room temp.) in an oxide layer grown at 1025°C. Hint: asi = 2.3 x 106 K1, asio2 = 0.5 x 106 K?, Esio2 = 50 GPa. %3D 0.24) layer on a 525 um (2) Assume you just deposited a 1 um PECVD nitride (E = 210 GPa, v = thick, 125 mm diameter Si wafer (assume E = 166 GPa, v = 0.24). The center deflection from the measurement system is 80 um downwards. Estimate the stress in the film, and indicate whether tensile or compressive. %3D 80 μm 1 μm Nitride Si Wafer
Expert Solution
steps

Step by step

Solved in 2 steps

Blurred answer
Knowledge Booster
Dimensional Analysis
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, mechanical-engineering and related others by exploring similar questions and additional content below.
Similar questions
  • SEE MORE QUESTIONS
Recommended textbooks for you
Precision Machining Technology (MindTap Course Li…
Precision Machining Technology (MindTap Course Li…
Mechanical Engineering
ISBN:
9781285444543
Author:
Peter J. Hoffman, Eric S. Hopewell, Brian Janes
Publisher:
Cengage Learning