Q-5: Fill in the following blanks:1- Thyristors are devices constructed withsemiconductor layers (pnpn).2- The silicon-controlled rectifier (SCR) can be triggered on by a - at the gate andturned off by reducing the ------- below the specified3- The --------, like the diac, is a bidirectional device. It can be turned on by a pulse atthe gate and conducts in a direction depending on theacross the two anodeterminals.4---------- of a unijunction transistor (UJT) determines the voltage at which thedevice will trigger on.5-The value of the anode current below which a device switches from theforward-conduction region to the forward-blocking region.6- The --- is capable of converting light energy in the form of photons intoelectrical energy in the form of a difference in potential or voltage.7- The limitations of Schottky Diode areand8- Theof power diodes can be increased by placing two or more in-----, andthe ------- rating can be increased by stacking the diodes in9- The photoconductive cell is a two-terminal semiconductor device, also is called a ---.10- An infrared-emitting diode emits a beam of radiant flux when

Power electronic devices are used highly in todays applications. SCR is one such power electronic…

Answered: Q-5: Fill in the following blanks: 1-…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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1- The silicon-controlled rectifier (SCR) can be triggered on by a ------ at the gate and turned off by reducing the --------- below the specified ----------.2- The ------- can conduct current in either direction and is turned on when a ----------is exceeded. It turns off when the current drops below the holding value.3- ------------ of a unijunction transistor (UJT) determines the voltage at which the device will trigger on4- ------------------ The voltage at which a device enters the forward-blocking region.5- ------------------; a three-terminal single pn junction device that exhibits a negative resistance characteristic.6- The Schottky barrier (hot-carrier) diode has a lower ------------, a larger reverse saturation current, and a smaller PIV than the conventional p – n junction variety. It can also be used at higher frequencies because of the reduced --------------.7- The --------- is capable of converting light energy in the form of photons into electrical energy in the form of a…
An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or amicrochip) is a set of 1.................. on one small flat piece (or "chip") of semiconductor material,normally 2. ……………The integration of large numbers of tiny transistors into a small chip results in circuits that areorders of magnitude smaller, cheaper, and faster than those constructed of discrete electroniccomponents. The IC's mass production 3. ………….., reliability and building-block approach tocircuit design has ensured the rapid 4…………. of standardized ICs in place of designs usingdiscrete transistors. ICs are now used in virtually all electronic equipment and haverevolutionized the world of electronics. Computers, mobile phones, and other digital homeappliances are now 5. ………….. parts of the structure of modern societies, made possible by thesmall size and low cost of ICs. Integrated circuits were made practical by mid-20th-century technology 6. …………….…
What is the effective voltage in the primary of an ideal Trafo with a turns NP / NS = 660/60; connected to a half-wave rectifier with RC load, whose filter capacitor is 1000μF with a load of 100Ω whose average voltage of output is 13.05V? Draw the wiring diagram correctly and care with the units!
Devices that pass the signal from its source to the measurement device without aphysical connection by using transformer, optical or capacitive coupling technique arecalled?Select one a. bridgesb. isolatorsc.filters d.rectifiers
A full-wave rectifier circuit with a 1-k load operatesfrom a 120-V (rms) 60-Hz household supply through a 6-to-1transformer having a center-tapped secondary winding. Ituses two silicon diodes that can be modeled to have a 0.7-Vdrop for all currents. Augment this rectifier circuit with acapacitor chosen to provide a peak-to-peak ripple voltage of(i) 10% of the peak output and (ii) 1% of the peak output. Ineach case: (a) What average output voltage results?(b) What fraction of the cycle does the diode conduct?(c) What is the average diode current?(d) What is the peak diode current?
2) Design a Regulated DC Power supply circuit in multisim of 5V for charging a mobilephone? Note: use bridge rectifier, ac voltage source 120 Vrms or 230 Vrms for the design and appropriate capacitors and voltage regulators to get output exactly at 5V.
Explain five (5) applications of the hall effects With the aid of a diagram, explain how a P-N Junction is form. iii. State five (5) application of PN Junction, and explain the property of the PN junction that make those application possible. Explain what carrier mobility is and elaborate on the factors that influence carrier mobility. A 80 V rms is stepped down to 18V rms by a transformer. The output from the transformer is rectified using a half wave rectifier circuit and connected to a 47.5 Ω load resistor. Draw a circuit diagram of this arrangement and the waveform at each stage. Calculate the following about the circuit in Figure 2.1 (If silicon diodes are employed in the rectification); the peak value of the output voltage considering the drop across each diode, the average voltage, iii. The current through the load resistor, The current diode, The frequency of the output signal, Calculate the efficiency of the full wave rectifier expressed in percentage. vii. Sketch…
EMG devices are equipped with circuits to rectify and next integrate the EMG signals to assessthe muscle force.Design an improved precision half-wave rectifier circuit with a gain of -2 ready to simulate to process signals having amplitudes ranging from -4V to +4V. draw the signal at the output of the designed rectifier circuit for the input signal1×sin(2πt) V
Given the circuit design for a Zener diode regulator in the previous question, what is the maximum power that will be dissipated by the Rs resistor? You are told that the source voltage Vs varies from 6 V to 11 V, the load current il varies between 2 mA and 45 mA, and the diode is an ideal 3 V Zener diode. You will need to recalculate the maximum allowable resistance Rs with your new values, as part of this question. Please enter your answer to 3 significant figures, and in Watts.
You are designing a power supply for a 100 W high-quality audio amplifier that will drive an 8 Ohm speaker. The datasheet says you need approximately a 75 V Vcc rail to properly supply the transistor power stage. To get the excellent performance you expect, you aim for 1% ripple, and choose a design that minimizes the amount of capacitance required to reduce cost. Assume the diode drop is 0.7 V, and the input AC voltage available from a transformer is 75 sin(377t) V. a)How much capacitance do you need (a real-world value in μF) ? b)What is the ripple voltage at 10 W output power? c)What should be the minimum voltage rating of the capacitor(s)?
Suppose a power supply is energized by an AC source of 119 V RMS. The transformer step-down ratio is 8:1, it uses a full-wave bridge rectifier circuit with silicon diodes, and the filter is nothing but a single electrolytic capacitor. Calculate the unloaded DC output voltage for this supply (assume 0.7 volts drop across each diode). Also, write an equation solving for DC output voltage (Vout), given all these parameters.
Design a full-wave bridge type power supply. Design the transformer, filter and regulator section. For the rectifier part, choose diode with appropriate PIV rating. Use standard values for your design. The output dc voltage should be 7.5 V and the Maximum output power be 20 mW. Use the topology below as reference

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