Q1/Assume that excess carriers have been generated uniformly in a semiconductor to a concentration of n(0) = 105 cm-3 . The forcing function generating the excess carriers turns off at time t = 0. Assuming the excess carrier lifetime is n, = 10 s. (a) t = 0, (b) t=1us, (c) t = 4µs, and (d) t = 10µs.

Power System Analysis and Design (MindTap Course List)
6th Edition
ISBN:9781305632134
Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Chapter6: Power Flows
Section: Chapter Questions
Problem 6.27P
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A- determine recombination hole in the state of thermal equilibrium

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Q1/Assume that excess carriers have been generated uniformly in a
semiconductor to a concentration of n(0) = 105 cm-3 . The forcing function
generating the excess carriers turns off at time t = 0. Assuming the excess carrier
lifetime is n, = 106 s.
(a) t = 0, (b) t=1us, (c) t = 4µs, and (d) t = 10µs.
Transcribed Image Text:Q1/Assume that excess carriers have been generated uniformly in a semiconductor to a concentration of n(0) = 105 cm-3 . The forcing function generating the excess carriers turns off at time t = 0. Assuming the excess carrier lifetime is n, = 106 s. (a) t = 0, (b) t=1us, (c) t = 4µs, and (d) t = 10µs.
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